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発表論文

[A01] [A02] [B01] [B02]

A01

  • [29] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface
    Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 919 (2017)
    DOI: 10.1016/j.jcrysgro.2016.10.064

  • [28] Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study
    Harunobu Nakane, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 93 (2017)
    DOI: 10.1016/j.jcrysgro.2016.09.019

  • [27] Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
    Masaaki Oseki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
    Physica Status Solidi B, 1700211 (2017)
    DOI: 10.1002/pssb.201700211

  • [26] Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    Physica Status Solidi A, 1700244 (2017)
    DOI: 10.1002/pssa.201700244

  • [25] Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
    Scientific Reports 7, 2112 (2017)
    DOI: 10.1038/s41598-017-02431-7

  • [24] Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers
    Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
    Journal of Vacuum Science and Technology B 35, 04F103-1-5 (2017)
    DOI: 10.1116/1.4980048

  • [23] First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions
    Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
    Physica Status Solidi B, 1600706 (2017)
    DOI: 10.1002/pssb.201600706

  • [22] Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer
    Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Physica Status Solidi C, 1600243 (2017)
    DOI: 10.1002/pssc.201600243

  • [21] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
    Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, Hiroshi Fujioka
    Japanese Journal of Applied Physics 56, 031002 (2017)
    DOI: 10.7567/JJAP.56.031002

  • [20] Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy
    Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 038002 (2017)
    DOI: 10.7567/JJAP.56.038002

  • [19] Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth
    Tomonori Ito, Toru Akiyama
    Crystals 7, 46 (2017)
    DOI: 10.3390/cryst7020046

  • [18] N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
    Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 5, 026102 (2017)
    DOI: 10.1063/1.4975617

  • [17] 窒化物半導体MOVPEの熱力学解析 ~面方位依存性~
    寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯
    日本結晶成長学会誌 Vol.43 No.4, 233 (2017)

  • [16] Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
    Applied Physics Express 10, 025502 (2017)
    DOI: 10.7567/APEX.10.025502

  • [15] Electrical properties of Si-doped GaN prepared using pulsed sputtering
    Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 110, 042103 (2017)
    DOI: 10.1063/1.4975056

  • [14] High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    Japanese Journal of Applied Physics 56, 015504 (2017)
    DOI: 10.7567/JJAP.56.015504

  • [13] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
    Hideto Miyake, Chia-Hung Lin, Kenta Tokoro, Kazumasa Hiramatsu
    Journal of Crystal Growth 456, 155-159 (2016)
    DOI: 10.1016/j.jcrysgro.2016.08.028

  • [12] Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
    Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
    Journal of Crystal Growth (2016)
    DOI: 10.1016/j.jcrysgro.2016.12.011

  • [11] Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2
    Rie Togashi, Yumi Kisanuki, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202BE (2016)
    DOI: 10.7567/JJAP.55.1202BE

  • [10] High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy
    Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202B3 (2016)
    DOI: 10.7567/JJAP.55.1202B3

  • [9] High-current-density indium nitride ultrathin-film transistors on glass substrates
    Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 142104 (2016)
    DOI: 10.1063/1.4964422

  • [8] Effective approach for accurately calculating individual energy of polar heterojunction interfaces
    Toru Akiyama, Harunobu Nakane, Kohji Nakamura, Tomonori Ito
    Physical Review B 94, 115302 (2016)
    DOI: 10.1103/PhysRevB.94.115302

  • [7] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
    Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Applied Physics Express 9, 102101 (2016)
    DOI: 10.7567/APEX.9.102101

  • [6] High hole mobility p-type GaN with low residual hydrogen concentration
    Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 4, 086103 (2016)
    DOI: 10.1063/1.4960485

  • [5] GaInN-based tunnel junctions with graded layers
    Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Express 9, 081005 (2016)
    DOI: 10.7567/APEX.9.081005

  • [4] InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
    Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 032106 (2016)
    DOI: 10.1063/1.4959777

  • [3] Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
    H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, H. Fujioka
    APL Materials 4, 076104 (2016)
    DOI: 10.1063/1.4959119

  • [2] Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
    Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 6, 29500 (2016)
    DOI: 10.1038/srep29500

  • [1] Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu
    Applied Physics Express 9, 125601 (2016)
    DOI: 10.7567/APEX.9.125601

A02

  • [12] Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
    Yusuke Kumazaki, Satoru Matsumoto, Taketomo Sato
    Journal of The Electrochemical Society 164, H477-H483 (2017)
    DOI: 10.1149/2.0771707jes

  • [11] Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
    Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato, Tamotsu Hashizume
    Journal of Applied Physics 121, 184501 (2017)
    DOI: 10.1063/1.4983013

  • [10] Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates
    Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata, Hideki Hirayama
    Physica Status Solidi C, 1600248 (2017)
    DOI: 10.1002/pssc.201600248

  • [9] Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
    Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama
    Applied Physics Express 10, 031002 (2017)
    DOI: 10.7567/APEX.10.031002

  • [8] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
    M. Imura, R. G. Banal, M. Y. Liao, J. Liu, T. Arizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
    Journal of Applied Physics 121, 25702 (2017)
    DOI: 10.1063/1.4972979

  • [7] Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer
    Joosun Yun, Hideki Hirayama
    Journal of Applied Physics 121, 13105 (2017)
    DOI: 10.1063/1.4973493

  • [6] Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE
    Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide
    Physica Status Solidi A 217, 1600727 (2016)
    DOI: 10.1002/pssa.201600727

  • [5] Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications
    Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, Daishi Inoue, Tomoka Kikistu, Hideki Hirayama
    Scientific Reports 6, 35681 (2016)
    DOI: 10.1038/srep35681

  • [4] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
    Shota Kaneki, Joji Ohira, Shota Toiya, Zenji Yatabe, Joel T. Asubar, Tamotsu Hashizume
    Applied Physics Letters 109, 3933001 (2016)
    DOI: 10.1063/1.4965296

  • [3] Design and fabrication of highperformance diamond triple-gate field-effect transistors
    Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide
    Scientific Reports 6, 34757 (2016)
    DOI: 10.1038/srep34757

  • [2] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
    J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
    Journal of Applied Physics 120, 124504-1 - 124504-4 (2016)
    DOI: 10.1063/1.4962851

  • [1] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors
    Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide
    Journal of Applied Physics 120, 115307-1 - 115307-7 (2016)
    DOI: 10.1063/1.4962854

B01

  • [2] Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction
    Kazuki Shida, Shotaro Takeuchi, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai
    ACS Applied Materials & Interfaces (2017)
    DOI: 10.1021/acsami.7b01309

  • [1] Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique
    Shohei Kamada, Shotaro Takeuchi, Dinh Thanh Khan, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, and Akira Sakai
    Applied Physics Express 9, 111001 (2016)
    DOI: 10.7567/APEX.9.111001

B02

  • [6] Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
    Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Mitsuaki Shimizu, Tokio Takahashi, Shoji Ishibashi, Akira Uedono, Shigefusa F. Chichibu
    Applied Physics Express 10, 061002 (2017)
    DOI: 10.7567/APEX.10.061002

  • [5] Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer
    Hiroshi Nakai, Mutsumi Sugiyama, Shigefusa F. Chichibu
    Applied Physics Letters 110, 181102 (2017)
    DOI: 10.1063/1.4982653

  • [4] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells
    Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 51003 (2017)
    DOI: 10.7567/APEX.10.051003

  • [3] High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells
    Hideaki Murotani, Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 021002 (2017)
    DOI: 10.7567/APEX.10.021002

  • [2] A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1-xN multiple quantum wells
    Kazunobu Kojima, Kentaro Furusawa, Yoshiki Yamazaki, Hideto Miyake, Kazumasa Hiramatsu, Shigefusa F. Chichibu
    Applied Physics Express 10, 015802 (2017)
    DOI: 10.7567/APEX.10.015802

  • [1] Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters
    Shigefusa F. Chichibu, Kazunobu Kojima, Akira Uedono, Yoshitaka Sato
    Advanced Materials 29, 1603644 (2017)
    DOI: 10.1002/adma.201603644