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発表論文

[A01] [A02] [B01] [B02]

A01

  1. Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
    Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
    Journal of Crystal Growth 492, 39 (2018)
    DOI: 10.1016/j.jcrysgro.2018.04.009

  2. Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing
    Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Isamu Akasaki
    Phys. Status Solidi B, 1700506 (2018)
    DOI: 10.1002/pssb.201700506

  3. Quantitative study on energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy
    Tomohiro Inaba, Takanori Kojima, Genki Yamashita, Eiichi Matsubara, Brandon Mitchell, Reina Miyagawa, Osamu Eryu, Jun Tatebayashi, Masaaki Ashida, Yasufumi Fujiwara
    Journal of Applied Physics 123, 161419 (2018)
    DOI: 10.1063/1.5011283

  4. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
    Toru Akiyama, Shinsuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
    Japanese Journal of Applied Physics 57, 04FR08 (2018)
    DOI: 10.7567/JJAP.57.04FR08

  5. Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy
    Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
    MRS Advances 3, 931-936 (2018)
    DOI: 10.1557/adv.2018.218

  6. A GaN-Based VCSEL with a Convex Structure for Optical Guiding
    Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Physica Status Solidi A, 1700648 (2018)
    DOI: 10.1002/pssa.201700648

  7. Polarity inversion of aluminum nitride by direct wafer bonding
    Yusuke Hayashi, Ryuji Katayama, Toru Akiyama, Tomonori Ito, Hideto Miyake
    Applied Physics Express 11, 31003 (2018)
    DOI: 10.7567/APEX.11.031003

  8. Threading Dislocation Reduction in InN Grown with in Situ Surface Modification by Radical Beam Irradiation
    Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
    Japanese Journal of Applied Physics 57, 035502/1-4 (2018)
    DOI: 10.7567/JJAP.57.035502

  9. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
    N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl
    Applied Physics Letters 112, 41110 (2018)
    DOI: 10.1063/1.5010265

  10. Characterization of femtosecond-laser-induced periodic structures on SiC substrates
    Reina Miyagawa, Yutaka Ohno, Momoko Deura, Ichiro Yonenaga, Osamu Eryu
    Japanese Journal of Applied Physics 57, 25602 (2018)
    DOI: 10.7567/JJAP.57.025602

  11. Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study
    Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Applied Physics Express 11, 25501 (2018)
    DOI: 10.7567/APEX.11.025501

  12. Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
    Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Journal of Crystal Growth 484, 50-55 (2018)
    DOI: 10.1016/j.jcrysgro.2017.12.036

  13. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy
    Ryo Yoshizawa, Hideto Miyake, Kazumasa Hiramatsu
    Japanese Journal of Applied Physics 57, 01AD05 (2018)
    DOI: 10.7567/JJAP.57.01AD05

  14. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
    Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 5, 126102 (2017)
    DOI: 10.1063/1.5008913

  15. Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns
    Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
    Japanese Journal of Applied Physics 56, 125504 (2017)
    DOI: 10.7567/JJAP.56.125504

  16. Structures and polarity of III-nitrides: phase diagram calculations using absolute surface and interface energies
    Toru Akiyama, Harunobu Nakane, Motoshi Uchino, Kohji Nakamura, Tomonori Ito
    Physica Status Solidi B (2017)
    DOI: 10.1002/pssb.201700329

  17. High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
    Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Letters 111, 191103 (2017)
    DOI: 10.1063/1.5001979

  18. Femtosecond-laser irradiation onto sapphire substrates in N2 ambient atmosphere
    Reina Miyagawa, Kenzo Goto, Osamu Eryu
    Physica Status Solidi C 14, 1700224 (2017)
    DOI: 10.1002/pssc.201700224

  19. Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study
    Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Physica Status Solidi B, 1700446 (2017)
    DOI: 10.1002/pssb.201700446

  20. High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy
    Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Letters 111, 162102 (2017)
    DOI: 10.1063/1.5008258

  21. Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
    Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Journal of Crystal Growth 480, 90-95 (2017)
    DOI: 10.1016/j.jcrysgro.2017.10.018

  22. Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
    Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 7, 12820 (2017)
    DOI: 10.1038/s41598-017-12518-w

  23. DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy
    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
    Applied Physics Letters 111, 141602-1-5 (2017)
    DOI: DOI: 10.1063/1.4991608

  24. Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Journal of Crystal Growth 477, 12 (2017)
    DOI: 10.1016/j.jcrysgro.2017.03.010

  25. Systematic Theoretical Investigations of Polytypism in AlN
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Physica Status Solidi C, 1700212 (2017)
    DOI: 10.1002/pssc.201700212

  26. Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Physica Status Solidi B, 1700241 (2017)
    DOI: 10.1002/pssb.201700241

  27. Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
    Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Express 10, 101002 (2017)
    DOI: 10.7567/APEX.10.101002

  28. Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
    Atsushi Kobayashi, Masaaki Oseki, Jitsuo Ohta, Hiroshi Fujioka
    Physica Status Solidi B, 1700320 (2017)
    DOI: 10.1002/pssb.201700320

  29. Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure
    Le Duc Anh, Noboru Okamoto, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya
    Scientific Reports 7, 8715(1-7) (2017)
    DOI: 10.1038/s41598-017-09125-0

  30. Highly selective photocatalytic reduction of carbon dioxide with water over silver-loaded calcium titanate
    Akihiko Anzai, Naoto Fukuo, Akira Yamamoto, Hisao Yoshida
    Catalysis Communications 100, 134-138 (2017)
    DOI: 10.1016/j.catcom.2017.06.046

  31. Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth
    Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 078003-1-3 (2017)
    DOI: 10.7567/JJAP.56.078003

  32. Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions
    CH. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu
    Journal of Crystal Growth 468, 845-850 (2017)
    DOI: 10.1016/j.jcrysgro.2016.09.076

  33. Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
    S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    Journal of Crystal Growth 468, 851-855 (2017)
    DOI: 10.1016/j.jcrysgro.2016.12.011

  34. Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface
    Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 919 (2017)
    DOI: 10.1016/j.jcrysgro.2016.10.064

  35. Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study
    Harunobu Nakane, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 93 (2017)
    DOI: 10.1016/j.jcrysgro.2016.09.019

  36. Theoretical investigation of nitride nanowire-based quantum-shell lasers
    Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
    Physica Status Solidi A, 1600867 (2017)
    DOI: 10.1002/pssa.201600867

  37. Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy
    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 070304-1-4 (2017)
    DOI: 10.7567/JJAP.56.070304

  38. Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
    Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    Scientific Reports 7, 2944 (2017)
    DOI: 10.1038/s41598-017-03151-8

  39. Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
    Masaaki Oseki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
    Physica Status Solidi B, 1700211 (2017)
    DOI: 10.1002/pssb.201700211

  40. Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    Physica Status Solidi A, 1700244 (2017)
    DOI: 10.1002/pssa.201700244

  41. eduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer
    Matou Tatsuya, Takeshima Kento, Anh Le Duc, Seki Munetoshi, Tabata Hitoshi, Tanaka Masaaki, Ohya Shinobu
    Applied Physics Letters 110, 212406(1-4) (2017)
    DOI: 10.1063/1.4984297

  42. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
    Scientific Reports 7, 2112 (2017)
    DOI: 10.1038/s41598-017-02431-7

  43. High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
    CY. Huang, PY. Wu, KS. Chang, YH. Lin, WC. Peng, YY. Chang, JP. Li, HW. Yen, YS. Wu, H. Miyake, HC. Kuo
    AIP Advances 7, 55110 (2017)
    DOI: 10.1063/1.4983708

  44. Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers
    Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
    Journal of Vacuum Science and Technology B 35, 04F103-1-5 (2017)
    DOI: 10.1116/1.4980048

  45. First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions
    Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
    Physica Status Solidi B, 1600706 (2017)
    DOI: 10.1002/pssb.201600706

  46. Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer
    Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Physica Status Solidi C, 1600243 (2017)
    DOI: 10.1002/pssc.201600243

  47. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
    Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, Hiroshi Fujioka
    Japanese Journal of Applied Physics 56, 031002 (2017)
    DOI: 10.7567/JJAP.56.031002

  48. Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy
    Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 038002 (2017)
    DOI: 10.7567/JJAP.56.038002

  49. Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth
    Tomonori Ito, Toru Akiyama
    Crystals 7, 46 (2017)
    DOI: 10.3390/cryst7020046

  50. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
    Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 5, 026102 (2017)
    DOI: 10.1063/1.4975617

  51. 窒化物半導体MOVPEの熱力学解析 ~面方位依存性~
    寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯
    日本結晶成長学会誌 Vol.43 No.4, 233 (2017)

  52. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
    Applied Physics Express 10, 025502 (2017)
    DOI: 10.7567/APEX.10.025502

  53. Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction
    DT. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai
    Japanese Journal of Applied Physics 56, 25502 (2017)
    DOI: 10.7567/JJAP.56.025502

  54. Electrical properties of Si-doped GaN prepared using pulsed sputtering
    Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 110, 042103 (2017)
    DOI: 10.1063/1.4975056

  55. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    Japanese Journal of Applied Physics 56, 015504 (2017)
    DOI: 10.7567/JJAP.56.015504

  56. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
    Hideto Miyake, Chia-Hung Lin, Kenta Tokoro, Kazumasa Hiramatsu
    Journal of Crystal Growth 456, 155-159 (2016)
    DOI: 10.1016/j.jcrysgro.2016.08.028

  57. Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
    Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
    Journal of Crystal Growth (2016)
    DOI: 10.1016/j.jcrysgro.2016.12.011

  58. Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2
    Rie Togashi, Yumi Kisanuki, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202BE (2016)
    DOI: 10.7567/JJAP.55.1202BE

  59. High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy
    Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202B3 (2016)
    DOI: 10.7567/JJAP.55.1202B3

  60. High-current-density indium nitride ultrathin-film transistors on glass substrates
    Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 142104 (2016)
    DOI: 10.1063/1.4964422

  61. Effective approach for accurately calculating individual energy of polar heterojunction interfaces
    Toru Akiyama, Harunobu Nakane, Kohji Nakamura, Tomonori Ito
    Physical Review B 94, 115302 (2016)
    DOI: 10.1103/PhysRevB.94.115302

  62. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
    Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Applied Physics Express 9, 102101 (2016)
    DOI: 10.7567/APEX.9.102101

  63. High hole mobility p-type GaN with low residual hydrogen concentration
    Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 4, 086103 (2016)
    DOI: 10.1063/1.4960485

  64. GaInN-based tunnel junctions with graded layers
    Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Express 9, 081005 (2016)
    DOI: 10.7567/APEX.9.081005

  65. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
    Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 032106 (2016)
    DOI: 10.1063/1.4959777

  66. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
    H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, H. Fujioka
    APL Materials 4, 076104 (2016)
    DOI: 10.1063/1.4959119

  67. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
    Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 6, 29500 (2016)
    DOI: 10.1038/srep29500

  68. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu
    Applied Physics Express 9, 125601 (2016)
    DOI: 10.7567/APEX.9.125601

A02

  1. Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by damage-free neutral-beam etching using bio-nano-templates
    Yafeng Chen, Takayuki Kiba, Junichi Takayama, Akio Higo, Tomoyuki Tanikawa, Shula Chen, Seiji Samukawa, Akihiko Murayama
    Journal of Applied Physics 123, 204305 (2018)
    DOI: 10.1063/1.5027627

  2. Annealing effects on hydrogenated diamond NOR logic circuits
    J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide
    Applied Physics Letters 112, 153501 (2018)
    DOI: 10.1063/1.5022590

  3. Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
    Noritoshi Maeda, Joosun Yun, Masafumi Jo, Hideki Hirayama
    Japanese Journal of Applied Physics 57, 04H08-1-4 (2018)
    DOI: 10.7567/JJAP.57FH08

  4. State of the art on gate insulation and surface passivation for GaN-based power HEMTs
    T. Hashizume, K. Nisgiguchi, S. Kaneki, J. Kuzmik, Z. Yatabe
    Materials Science in Semiconductor Processing 78, 85-95 (2018)
    DOI: 10.1016/j.mssp.2017.09.028

  5. Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
    Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, Takashi Matsuoka
    Applied Physics Express 11, 31004 (2018)
    DOI: 10.7567/APEX.11.031004

  6. High thermoelectric power factor of high-mobility two-dimensional electron gas
    H. Ohta, S. W. Kim, S. Kaneki, A. Yamamoto, T. Hashizume
    Advanced Science 5, 1700696 (2018)
    DOI: 10.1002/advs.201700696

  7. Effects of Ga supply on the growth of (11-22) AlN on m-plane (10-10) sapphire substrates
    Masafumi Jo, Hideki Hirayama
    Physica Status Solidi B, 1700418-1-4 (2018)
    DOI: 10.1002/pssb.201700418

  8. Improving the light-extraction efficiency of AlGaN DUV-LEDs by using a superlattice hole spreading layer and an Al reflector
    Noritoshi Maeda, Masafumi Jo, Hideki Hirayama
    Physica Status Solidi A, 1700436-1-5 (2018)
    DOI: 10.1002/pssa.201700436

  9. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
    Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka
    Applied Physics Express 11, 15503 (2018)
    DOI: 10.7567/APEX.11.015503

  10. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
    M. Matys, B. Adamowicz, S. Kaneki, K. Nishiguchi, T. Hashizume
    Journal of Applied Physics 122, 224504 (2017)
    DOI: 10.1063/1.5000497

  11. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
    Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Masafumi Jo, Takeshi Iwai, Toshiro Morita, Mitsunori Kokubo, Takaharu Tashiro, Ryuichiro Kamimura, Yamato Osada, Hideki Takagi, Hideki Hirayama
    Applied Physics Express 11, 012101-1-4 (2018)
    DOI: 10.7567/APEX.11.012101

  12. Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen‐Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate
    Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide
    Physica Status Solidi A 214, 1700463-1-6 (2017)
    DOI: 10.1002/pssa.201700463

  13. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS-HEMTs
    K. Nishiguchi, S. Kaneki, S. Ozaki, T. Hashizume
    Japanese Journal of Applied Physics 56, 101001 (2017)
    DOI: 10.7567/JJAP.56.101001

  14. Design for stable lasing of an indirect injection THz quantum cascade laser operating at less than 2 THz
    Tsung-Tse Lin, Hideki Hirayama
    International Journal of Materials Science and Applications 11, 012101-1-4 (2017)
    DOI: 10.11648/j.ijmsa.20170605.11

  15. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations
    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
    Applied Physics Express 10, 082101 (2017)
    DOI: 10.7567/APEX.10.082101

  16. Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy
    Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka
    Physics Status Solidi B, 1600751 (2017)
    DOI: 10.1002/pssb.201600751

  17. Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
    J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide
    Journal of Applied Physics 121, 224502 (2017)
    DOI: 10.1063/1.4985066

  18. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
    J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide
    Applied Physics Letters 110, 203502 (2017)
    DOI: 10.1063/1.4983091

  19. Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking
    R. Negishi, K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa, Y. Kobayashi
    Applied Physics Letters 110, 201901 (2017)
    DOI: 10.1063/1.4983349

  20. Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
    Yusuke Kumazaki, Satoru Matsumoto, Taketomo Sato
    Journal of The Electrochemical Society 164, H477-H483 (2017)
    DOI: 10.1149/2.0771707jes

  21. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
    Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura,, Eiichiro Watanabe, Yasuo Koide
    IEEE Electron Device Letters 38, 922 (2017)
    DOI: 10.1109/led.2017.2702744

  22. Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
    Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato, Tamotsu Hashizume
    Journal of Applied Physics 121, 184501 (2017)
    DOI: 10.1063/1.4983013

  23. Improving sensor response using reduced graphene oxide film transistor biosensor by controlling the pyrene adsorption as an anchor molecules
    Ryota Negishi, Yuji Matsui, Yoshihiro Kobayashi
    Japanese Joournal of Applied Physics 56, 06GE04 (2017)
    DOI: 10.7567/JJAP.56.06GE04

  24. Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
    Jiangwei Liu, Yasuo Koide
    Biosensors and Biodetection 1572, pp217-232 (2017)
    DOI: 10.1007/978-1-4939-6911-1_15

  25. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy
    Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi
    Journal of Applied Physics 121, 095703 (2017)
    DOI: 10.1063/1.4977201

  26. Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates
    Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata, Hideki Hirayama
    Physica Status Solidi C, 1600248 (2017)
    DOI: 10.1002/pssc.201600248

  27. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
    Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama
    Applied Physics Express 10, 031002 (2017)
    DOI: 10.7567/APEX.10.031002

  28. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
    M. Imura, R. G. Banal, M. Y. Liao, J. Liu, T. Arizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
    Journal of Applied Physics 121, 25702 (2017)
    DOI: 10.1063/1.4972979

  29. Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer
    Joosun Yun, Hideki Hirayama
    Journal of Applied Physics 121, 13105 (2017)
    DOI: 10.1063/1.4973493

  30. High-quality AlN template grown on a patterned Si (111) substrate
    Binh Tinh Tran, Hideki Hirayama, Masafumi Jo, Noritoshi Maeda, Daishi Inoue, Tomoka Kikitsu
    Journal of Crystal Growth 426, 225-229 (2017)
    DOI: 10.1016/j.jcrysgro.2016.12.100

  31. Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE
    Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide
    Physica Status Solidi A 217, 1600727 (2016)
    DOI: 10.1002/pssa.201600727

  32. Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications
    Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, Daishi Inoue, Tomoka Kikistu, Hideki Hirayama
    Scientific Reports 6, 35681 (2016)
    DOI: 10.1038/srep35681

  33. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
    Shota Kaneki, Joji Ohira, Shota Toiya, Zenji Yatabe, Joel T. Asubar, Tamotsu Hashizume
    Applied Physics Letters 109, 3933001 (2016)
    DOI: 10.1063/1.4965296

  34. Design and fabrication of highperformance diamond triple-gate field-effect transistors
    Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide
    Scientific Reports 6, 34757 (2016)
    DOI: 10.1038/srep34757

  35. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
    J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
    Journal of Applied Physics 120, 124504-1 - 124504-4 (2016)
    DOI: 10.1063/1.4962851

  36. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors
    Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide
    Journal of Applied Physics 120, 115307-1 - 115307-7 (2016)
    DOI: 10.1063/1.4962854

B01

  1. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
    A Uedono, T. Nabatame, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, S. Ishibashi
    Journal of Applied Physics 123, 155302(1-8) (2018)
    DOI: 10.1063/1.5026831

  2. Terahertz pulse generation by the tilted pulse front technique using an M-shaped optical system
    Ken Morita, Kento Shiozawa, Koji Suizu, Yoshihiro Ishitani
    Japanese Journal of Applied Physics 57, 50304 (2018)
    DOI: 10.7567/JJAP.57.050304

  3. Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy
    Takeaki Hamachi, Shotaro Takeuchi, Tetsuya Tohei, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Akira Sakai
    Journal of Applied Physics 123, 161417 (2018)
    DOI: 10.1063/1.5011345

  4. AlN metal-semiconductor field-effect transistors using Si-ion implantation
    Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomás Palacios
    Japanese Journal of Applied Physics 57, 04FR11 (2018)
    DOI: 10.7567/JJAP.57.04FR11

  5. MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
    J. Lemettinen, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen
    Journal of Crystal Growth 487, 50 (2018)
    DOI: 10.1016/j.jcrysgro.2018.02.020

  6. X-ray electron density investigation of chemical bonding in van der Waals materials
    Hidetaka Kasai, Kasper Tolborg, Mattia Sist, Jiawei Zhang, Venkatesha R. Hathwar, Mette Ø. Filsø, Simone Cenedese, Kunihisa Sugimoto, Jacob Overgaard, Eiji Nishibori, Bo B. Iversen
    Nature Materials 17, 249 (2018)
    DOI: 10.1038/s41563-017-0012-2

  7. MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
    J. Lemettinen, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen
    Journal of Crystal Growth 487, 12 (2018)
    DOI: 10.1016/j.jcrysgro.2018.02.013

  8. Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
    S. Iwashita, T. Moriya, T. Kikuchi, M. Kagaya, N. Noro, T. Hasegawa, A. Uedono
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 021515(1-8) (2018)
    DOI: 10.1116/1.5001552

  9. Retreat from Stress: Rattling in a Planar Coordination
    Koichiro Suekuni, Chul Ho Lee, Hiromi I. Tanaka, Eiji Nishibori, Atsushi Nakamura, Hidetaka Kasai, Hitoshi Mori, Hidetomo Usui, Masayuki Ochi, Takumi Hasegawa, Mitsutaka Nakamura, Seiko Ohira-Kawamura, Tatsuya Kikuchi, Koji Kaneko, Hirotaka Nishiate, Katsuaki Hashikuni, Yasufumi Kosaka, Kazuhiko Kuroki, Toshiro Takabatake
    Advanced Materials 30, 1706230 (2018)
    DOI: 10.1002/adma.201706230

  10. Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1- x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy
    M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, T. Honda
    Applied Physics Express 11, 021002(1-4) (2018)
    DOI: 10.7567/APEX.11.021002

  11. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
    Kazuki Shida, Shotaro Takeuchi, Tetsuya Tohei, Hideto Miyake, Kazumasa Hiramatsu, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
    Journal of Applied Physics 123, 161563 (2018)
    DOI: 10.1063/1.5011291

  12. Carrier trapping by vacancy-type defects in Mg-implanted GaN studied using monoenergetic positron beams
    A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, S. Ishibashi
    Phys. Stat. Sol. B 2017, 1700521(1-9) (2017)
    DOI: 10.1002/pssb.201700521

  13. Two-Component Density Functional Study of Positron-Vacancy Interaction in Metals and Semiconductors
    Shoji Ishibashi
    Acta Physica Polonica A 132, 1602-1605 (2017)
    DOI: 10.12693/APhysPolA.132.1602

  14. Study of Li atom diffusion in amorphous Li3PO4 with neural network potential
    Wenwen Li, Yasunobu Ando, Emi Minamitani, Satoshi Watanabe
    The Journal of Chemical Physics 147, 214106 (2017)
    DOI: 10.1063/1.4997242

  15. Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures
    Hironiri Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, Yoshihiro Ishitani
    Journal of Physics D: Applied Physics 51, 15105 (2017)
    DOI: /10.1088/1361-6463/aa9918

  16. Ferroelectric and Magnetic Properties in Room-Temperature Multiferroic GaxFe2−xO3 Epitaxial Thin Films
    Tsukasa Katayama, Shintaro Yasui, Yosuke Hamasaki, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Mitsuru Itoh
    Advanced Functional Materials 28, 1704789 (2018)
    DOI: 10.1002/adfm.201704789

  17. Population decay time and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients
    Kensuke Oki, Bei Ma, Yoshihiro Ishitani
    Physical Review B 96, 205204 (2017)
    DOI: 10.1103/PhysRevB.96.205204

  18. Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles
    L. V. Devi, S. Sellaiyan, T. Selvalakshmi, H.J. Zhang, A. Uedono, K. Sivaji, S. Sankar
    Advanced Powder Technology 28, 3026-3038 (2017)
    DOI: 10.1016/j.apt.2017.09.013

  19. Strain-induced nanostructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 on SrTiO3 epitaxial thin films with low PbTiO3 concentration
    Takanori Kiguchi, Cangyu Fan, Takahisa Shiraishi, Toyohiko J. Konno
    Japanese Journal of Applied Physics 56, 10PB12 (2017)
    DOI: 10.7567/JJAP.56.10PB12

  20. Control of dislocation morphology and lattice distortion in Na-flux GaN crystals
    Shotaro Takeuchi, Yuki Mizuta, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
    Journal of Applied Physics 122, 105303 (2017)
    DOI: 10.1063/1.4989647

  21. Cu diffusion in amorphous Ta2O5 studied with a simplified neural network potential
    Wenwen Li, Yasunobu Ando, Satoshi Watanabe
    Journal of the Physical Society of Japan 86, 104004 (2017)
    DOI: 10.7566/JPSJ.86.104004

  22. First-principles calculation of electron-phonon coupling at a Ga vacancy in GaN
    T. Tsujio, M. Oda, Y. Shinozuka
    Japanese Journal of Applied Physics 56, 091001 (2017)
    DOI: 10.7567/JJAP.56.091001

  23. Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
    A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, M. Sumiya
    Thin Solid Films 639, 78-83 (2017)
    DOI: 10.1016/j.tsf.2017.08.021

  24. Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing
    S. R. Aid, T. Uneme, N. Wakabayashi, K. Yamazaki, A Uedono, S. Matsumoto
    Physica Status Solidi A 214, 1700225(1-5) (2017)
    DOI: 10.1002/pssa.201700225

  25. Crystal structure and magnetism in κ-Al2O3-type AlxFe2-xO3 films on SrTiO3(111)
    Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Tomoyasu Taniyama, Mitsuru Itoh
    Journal of Applied Physics 122, 15301 (2017)
    DOI: 10.1063/1.4990947

  26. Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation
    A. Uedono, M. Imanishi, M. Imade, M. Yoshimura, S. Ishibashi, M. Sumiya, Y. Mori
    Journal of Crystal Growth 475, 261-265 (2017)
    DOI: 10.1016/j.jcrysgro.2017.06.027

  27. Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction
    Kazuki Shida, Shotaro Takeuchi, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai
    ACS Applied Materials & Interfaces (2017)
    DOI: 10.1021/acsami.7b01309

  28. Effect of La doping on the lattice defects and photoluminescence properties of CuO
    L. V. Devi, T. Selvalakshmi, S. Sellaiyan, A. Uedono, K. Sivaji, S. Sankar
    Journal of Alloys and Compounds 709, 496-504 (2017)
    DOI: 10.1016/j.jallcom.2017.03.148

  29. Influence of Si wafer thinning processes on (sub)surface defects
    F. Inoue, A. Jourdain, L. Peng, A. Phommahaxay, J. De Vos, K. J. Rebibis, A. Miller, E. Sleeckx, E. Beyne, A. Uedono
    Applied Surface Science 404, 82-87 (2017)
    DOI: 10.1016/j.apsusc.2017.01.259

  30. Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9/Si structures using a monoenergetic positron beam
    A. Uedono, M. Zhao, E. Simoen
    J. Appl. Phys. 120, 215702(1-7) (2016)
    DOI: 10.1063/1.4970984

  31. Electronic structure calculation of Si1-xSnx compound alloy using interacting quasi‐band theory
    Masato Oda, Yukina Kuroda, Ayaka Kishi, Yuzo Shinozuka
    Physica Status Solidi B 254, 1600519 (2017)
    DOI: 10.1002/pssb.201600519

  32. Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure
    Y. Mizushima, Y. Kim, T. Nakamura, A. Uedono, T. Ohba
    Microelectronic Engineering 167, 23-31 (2017)
    DOI: 10.1016/j.mee.2016.10.010

  33. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique
    Shohei Kamada, Shotaro Takeuchi, Dinh Thanh Khan, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, and Akira Sakai
    Applied Physics Express 9, 111001 (2016)
    DOI: 10.7567/APEX.9.111001

  34. Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films
    Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
    Journal of Physics D: Applied Physics 49, 351107 (2016)
    DOI: 10.1088/0022-3727/49/37/375107

  35. Investigation on photoluminescence properties and defect chemistry of GdAlO3:Dy3+ Ba2+ phosphors
    T. Selvalakshmi, S. Sellaiyan, A. Uedono, T. Semba, A. C. Bose
    Optical Materials 58, 524-530 (2016)
    DOI: 10.1016/j.optmat.2016.06.044

B02

  1. Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
    Hideaki Murotani, Yuya Hayakawa, Kazuki Ikeda, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Journal of Applied Physics 123, 205705/1-7 (2018)
    DOI: 10.1063/1.5023996

  2. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, A. Uedono
    Applied Physics Letters 112, 211901 (2018)
    DOI: 10.1063/1.5030645

  3. Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells
    Satoshi Kurai, Nobuto Imura, Li Jin, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Japanese Journal of Applied Physics 57, 60311 (2018)
    DOI: 10.7567/JJAP.57.060311

  4. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
    Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Shoji Ishibashi
    Journal of Applied Physics 123, 161413 1-13 (2018)
    DOI: 10.1063/1.5012994

  5. Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals
    Shigefusa F. Chichibu, Youichi Ishikawa, Hiroko Kominami, Kazuhiko Hara
    Journal of Applied Physics 123, 065104 1-8 (2018)
    DOI: 10.1063/1.5021788

  6. Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells
    Atsushi Sakaki, Mitsuru Funato, Tomoaki Kawamura, Jun Araki, Yoichi Kawakami
    Applied Physics Express 11, 31001 (2018)
    DOI: 10.7567/APEX.11.031001

  7. Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer
    Hideaki Murotani, Kazuki Ikeda, Takuto Tsurumaru, Ryota Fujiwara, Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Physica Status Solidi B, 1700374 (2018)
    DOI: 10.1002/pssb.201700374

  8. Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface
    Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Takuya Hashimoto, Hiroki Kawakami, Yuki Fuchikami, Hiromu Hisazawa, Yasuhiro Tanaka
    Applied Physics Express 11, 16502 (2018)
    DOI: 10.7567/APEX.11.016502

  9. Potential barrier formed around dislocations in InGaN quantum well structures by spot cathodoluminescence measurements
    Satoshi Kurai, Shota Higaki, Nobuto Imura, Kohei Okawa, Ryoga Makio, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
    Physica Status Solidi B, 1700358 (2017)
    DOI: 10.1002/pssb.201700358

  10. Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells
    Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 10, 121001 (2017)
    DOI: 10.7567/APEX.10.121001

  11. Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells
    Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada
    Applied Physics Letters 111, 172105 (2017)
    DOI: 10.1063/1.4998798

  12. Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond
    Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, Yasuhiro Tanaka
    Japanese Journal of Applied Physics 56, 112701 (2017)
    DOI: 10.7567/JJAP.56.112701

  13. Spatially resolved spectroscopy of blue and green InGaN quantum wells by scanning near-field optical microscopy
    Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
    Physica Status Solidi B, 1700322 (2017)
    DOI: 10.1002/pssb.201700322

  14. Origin of temperature-induced luminescence peak shifts from semipolar (11-22) InGaN quantum wells
    Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami
    Physical Review B 96, 125305 (2017)
    DOI: 10.1103/PhysRevB.96.125305

  15. First-principles calculation of electron?phonon coupling at a Ga vacancy in GaN
    Takeshi Tsujio, Masato Oda, Yuzo Shinozuka
    Japanese Journal of Applied Physics 56, 91001 (2017)
    DOI: 10.7567

  16. Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals
    Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shigefusa F. Chichibu
    Applied Physics Letters 111, 32111 (2017)
    DOI: 10.1063/1.4995398

  17. Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities
    Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 10, 71003 (2017)
    DOI: 10.7567/APEX.10.071003

  18. High-efficiency light emission by means of exciton-surface-plasmon coupling
    Koichi Okamoto, Mitsuru Funato, Yoichi Kawakami, Kaoru Tamada
    Journal of Photochemistry and Photobiology C: Photochemistry Reviews 32, 58 (2017)
    DOI: 10.1016/j.jphotochemrev.2017.05.005

  19. Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
    Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Mitsuaki Shimizu, Tokio Takahashi, Shoji Ishibashi, Akira Uedono, Shigefusa F. Chichibu
    Applied Physics Express 10, 061002 (2017)
    DOI: 10.7567/APEX.10.061002

  20. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer
    Hiroshi Nakai, Mutsumi Sugiyama, Shigefusa F. Chichibu
    Applied Physics Letters 110, 181102 (2017)
    DOI: 10.1063/1.4982653

  21. Effects of Al and N2 flow sequences on the interface formation of AlN on sapphire by EVPE
    Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
    Crystals 7, 123 (2017)
    DOI: 10.3390/cryst7050123

  22. Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells
    Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 051003 (2017)
    DOI: 10.7567/APEX.10.051003

  23. Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates
    Mitsuru Funato, Mami Shibaoka, Yoichi Kawakami
    Journal of Applied Physics 121, 85304 (2017)
    DOI: 10.1063/1.4977108

  24. Deep ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells
    Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 10, 31001 (2017)
    DOI: 10.7567/APEX.10.031001

  25. High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells
    Hideaki Murotani, Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 021002 (2017)
    DOI: 10.7567/APEX.10.021002

  26. A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1-xN multiple quantum wells
    Kazunobu Kojima, Kentaro Furusawa, Yoshiki Yamazaki, Hideto Miyake, Kazumasa Hiramatsu, Shigefusa F. Chichibu
    Applied Physics Express 10, 015802 (2017)
    DOI: 10.7567/APEX.10.015802

  27. Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters
    Shigefusa F. Chichibu, Kazunobu Kojima, Akira Uedono, Yoshitaka Sato
    Advanced Materials 29, 1603644 (2017)
    DOI: 10.1002/adma.201603644

  28. Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells
    Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara
    Applied Physics Letters 109, 182101 (2016)
    DOI: 10.1063/1.4965844

  29. Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy
    Yoichi Kawakami, Akio Kaneta, Akira Hashiya, Mitsuru Funato
    Physical Review Applied 6, 44018 (2016)
    DOI: 10.1103/PhysRevApplied.6.044018

  30. Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy
    PeiTsen Wu, Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
    Crystal Growth & Design 16, 6337 (2016)
    DOI: 10.1021/acs.cgd.6b00979