発表論文

[A01] [A02] [B01] [B02]

A01

Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics
Kohei Ueno, Keita Shibahara, Atsushi Kobayashi, Hiroshi Fujioka
Applied Physics Letters 118, 022102 (2021)
DOI: 10.1063/5.0036093

Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group-III-V binary compounds
Toru Akiyama, Takahiro Kawamura, Tomonori Ito
Applied Physics Letters 118, 023101 (2021)
DOI: 10.1063/5.0032452

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces
Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
Applied Physics Letters 117, 231601 (2020)
DOI: 10.1063/5.0031604

Temperature dependence of Ga₂O₃ growth by halide vapor phase epitaxy on sapphire and β-Ga₂O₃ substrates
Ken Goto, Hidetoshi Nakahata, Hisashi Murakami, Yoshinao Kumagai
Applied Physics Letters 117, 222101 1-5 (2020)
DOI: 10.1063/5.0031267

A simple theoretical approach to growth mode of InN and InGaN thin films on GaN(0001) substrate
Katsuya Nagai, Toru Akiyama, Kohji Nakamura, Tomonori Ito
ECS Transactions 98, 155 (2020)
DOI: 10.1149/09806.0155

Effects of wet ambient on dry oxidation processes at 4H-SiC/SiO₂ interface: An ab initio study
Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
ECS Transactions 98, 37 (2020)
DOI: 10.1149/09803.0037

Absolute surface energies of oxygen-adsorbed GaN surfaces
Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
Journal of Crystal Growth 549, 125868 (2020)
DOI: 10.1016/j.jcrysgro.2020.125868

Structural evaluation of low-temperature-grown InGaAs crystals on (0 0 1) InP substrates
Osamu Ueda, Noriaki Ikenaga, Shingo Hirose, Kentaro Hirayama, Shunsuke Tsurisaki, Yukihiro Horita, Yoriko Tominaga
Journal of Crystal Growth 548, 125852 (2020)
DOI: 10.1016/j.jcrysgro.2020.125852

Effect of Film Thickness on Structural Stability for BAlN and BGaN Alloys: Bond-Order Interatomic Potential Calculations
Yuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Physica Status Solidi B 257, 2000205 (2020)
DOI: 10.1002/pssb.202000205

Epitaxial mist chemical vapor deposition growth and characterization of Cu₃N films on (0001)α-Al₂O₃ substrates
Tomohiro Yamaguchi, Hiroki Nagai, Takanori Kiguchi, Nao Wakabayashi, Takuto Igawa, Toshimi Hitora, Takeyoshi Onuma, Tohru Honda, Mitsunobu Sato
Applied Physics Express 13, 075505 (2020)
DOI: 10.35848/1882-0786/ab9a8f

Impact of hydrochloric acid on the epitaxial growth of In₂O₃ films on (0001)α-Al₂O₃ substrates by mist CVD
Tomohiro Yamaguchi, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Kentaro Kaneko, Shizuo Fujita, Hiroki Nagai, Mitsunobu Sato, Takeyoshi Onuma, Tohru Honda
Applied Physics Express 13, 075504 (2020)
DOI: 10.35848/1882-0786/ab9a90

Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study
Takumi Ohka, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Crystal Growth & Design 20, 4358-4365 (2020)
DOI: 10.1021/acs.cgd.0c00117

Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition
Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Applied Physics Express 13, 065505 (2020)
DOI: 10.35848/1882-0786/ab9182

Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering
Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
Applied Physics Express 13, 061006 (2020)
DOI: 10.35848/1882-0786/ab916e

Photoelectron spectroscopic study on electronic state of corundum In₂O₃ epitaxial thin film grown by mist-CVD
Takahiro Nagata, Tomohiro Yamaguchi, Shigenori Ueda, Wei Yi, Jun Chen, Takuya Kobayashi, Hirokazu Yokoo, Tohru Honda, Yoshiyuki Yamashita, Toyohiro Chikyow
Japanese Journal of Applied Physics 59, SIIG12 (2020)
DOI: 10.35848/1347-4065/ab84b2

Crystalline quality of low-temperature-grown In_xGa_1-_xAs coherently grown on InP(0 0 1) substrate
Yoriko Tominaga, Shingo Hirose, Kentaro Hirayama, Hitoshi Morioka, Noriaki Ikenaga, Osamu Ueda
Journal of Crystal Growth 544, 125703 (2020)
DOI: 10.1016/j.jcrysgro.2020.125703

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO₂ interface
Tsunashi Shimizu, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
Japanese Journal of Applied Physics 59, SMMD01 (2020)
DOI: 10.35848/1347-4065/ab85dd

Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE
Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Applied Physics Express 13, 055507 (2020)
DOI: 10.35848/1882-0786/ab8723

Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy
Daichi Yosho, Fumiya Shintaku, Yuya Inatomi, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Physica Status Solidi RRL, 2000142 (2020)
DOI: 10.1002/pssr.202000142

Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor-Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies
Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito
Physica Status Solidi B 257, 1900523 (2020)
DOI: 10.1002/pssb.201900523

Modeling carbon coverage on polar GaN surfaces during MOVPE
Daichi Yosho, Yuya Inatomi, Yoshihiro Kangawa
Japanese Journal of Applied Physics 59, 048002 (2020)
DOI: 10.35848/1347-4065/ab80e2

Optical characteristics of highly conductive n-type Gan prepared by pulsed sputtering deposition
Kohei Ueno, Taiga Fudetani, Atsushi Kobayashi, Hiroshi Fujioka
Scientific Reports 9, 20242 (2019)
DOI: 10.1038/s41598-019-56306-0

Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces
Toru Akiyama, Takumi Ohka, Kohji Nakamura, Tomonori Ito
Japanese Journal of Applied Physics 59, SGGK03 (2020)
DOI: 10.7567/1347-4065/ab6566

Ab initio study for adsorption and desorption behavior at step edges of GaN (0001) surface
Toru Akiyama, Takumi Ohka, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 532, 125410 (2020)
DOI: 10.1016/j.jcrysgro.2019.125410

Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate
Kazuhiro Yonemoto, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 532, 125369 (2020)
DOI: 10.1016/j.jcrysgro.2019.125369

Realization of honeycomb structures in octet A^NB^8-N binary compounds under two-dimensional limit
Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
Applied Physics Express 12, 125501 (2019)
DOI: 10.7567/1882-0786/ab524c

First‐Principles Calculation of Bandgaps of Al_1-xIn_xN Alloys and Short‐Period Al_1-xIn_xN/Al_1-yIn_yN Superlattices
Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Małgorzata Wierzbowska, Stanisław Krukowski
Physica Status Solidi B, 1900530 (2019)
DOI: 10.1002/pssb.201900530

Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE
Yuya Inatomi, Yoshihiro Kangawa
Applied Surface Science 502, 144205 (2020)
DOI: 10.1016/j.apsusc.2019.144205

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers
Masumi Sakamoto, Atsushi Kobayashi, Yoshino K. Fukai, Kohei Ueno, Yuki Tokumoto, Hiroshi Fujioka
Journal of Applied Physics 126, 075701 (2019)
DOI: 10.1063/1.5117307

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
AIP Advances 9, 075123 (2019)
DOI: 10.1063/1.5103185

Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)
Kazuhiro Yonemoto, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Japanese Journal of Applied Physics 58, SIIB25 (2019)
DOI: 10.7567/1347-4065/ab19ad

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution
Shinji Yasue, Kosuke Sato, Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki
Japanese Journal of Applied Physics 58, SCCC30 (2019)
DOI: 10.7567/1347-4065/ab112a

450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers
Kei Arakawa, Kohei Miyoshi, Ryosuke Iida, Yuki Kato, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Japanese Journal of Applied Physics 58, SCCC28 (2019)
DOI: 10.7567/1347-4065/ab12ca

Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy
Shunya Otsuki, Daiki Jinno, Hisayoshi Daicho, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
Japanese Journal of Applied Physics 58, SC1054 (2019)
DOI: 10.7567/1347-4065/ab07aa

Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures
Toru Akiyama, Motoshi Uchino, Kohji Nakamura, Tomonori Ito, Shiyu Xiao, Hideto Miyake
Japanese Journal of Applied Physics 58, SCCB30 (2019)
DOI: 10.7567/1347-4065/ab0d01

Theoretical investigations on the structural stability and miscibility in BAlN and BGaN alloys: bond-order interatomic potential calculations
Yuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Japanese Journal of Applied Physics 58, SCCB21 (2019)
DOI: 10.7567/1347-4065/ab06af

Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions
Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa
Japanese Journal of Applied Physics 58, SC1014 (2019)
DOI: 10.7567/1347-4065/ab040a

Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate
Shinnosuke Tsumuki, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Japanese Journal of Applied Physics 58, SC1009 (2019)
DOI: 10.7567/1347-4065/ab06b1

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
Kyohei Nakamura, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
Scientific Reports 9, 6254 (2019)
DOI: 10.1038/s41598-019-42822-6

CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films
Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa
Materials 12, 972 (2019)
DOI: 10.3390/ma12060972

Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study
Toru Akiyama, Kohji Nakamura, Tomonori Ito
Nanotechnology 30, 234002 (2019)
DOI: 10.1088/1361-6528/ab06d0

Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoint
Tomonori Ito, Toru Akiyama, Kohji Nakamura
Journal of Crystal Growth 512, 41-46 (2019)
DOI: 10.1016/j.crysgro.2019.01.028

Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides
Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
Physical Review Materials 3, 23401 (2019)
DOI: 10.1103/PhysRevMaterials.3.023401

An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(111) substrate
Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 511, 89 (2019)
DOI: doi.org/10.1016/j.jcrysgro.2019.01.036

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
Applied Physics Letters 114, 032102 (2019)
DOI: 10.1063/1.5079673

Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy
Y. Inatomi, Y. Kangawa, A. Pimpinelli, T. L. Einstein
Phsical Review Materials 3, 13401 (2019)
DOI: 10.1103/PhysRevMaterials.3.013401

Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth
Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 510, 7-12 (2019)
DOI: 10.1016/j.jcrysgro.2018.12.011

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka
APL Materials 6, 111103 (2018)
DOI: 10.1063/1.5051555

First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth
Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto, Toru Akiyama
Japanese Journal of Applied Physics 57, 115504 (2018)
DOI: 10.7567/JJAP.57.115504

Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys
Yuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 504, 13-16 (2018)
DOI: 10.1016/j.jcrysgro.2018.09.016

Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)
Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
Physica Status Solidi A, 1800476 (2018)
DOI: 10.1002/pssa.201800476

An ab initio approach to polarity inversion of AlN and GaN films on AlN(000-1) substrate with Al overlayers: an insight from interface energies
Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito
Japanese Journal Applied Physics 57, 98001 (2018)
DOI: 10.7567/JJAP.57.098001

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation
Fumihiro Fujie, Shunta Harada, Haruhiko Koizumi, Kenta Murayama, Kenji Hanada, Miho Tagawa, Toru Ujihara
Applied Physics Letters 113, 012101 (2018)
DOI: 10.1063/1.5038189

Comparison of O₂ and H₂O as oxygen source for homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy
Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
Journal of Crystal Growth 492, 39 (2018)
DOI: 10.1016/j.jcrysgro.2018.04.009

Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto
Journal of Applied Physics 124, 95702 (2018)
DOI: 10.1063/1.5042561

Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing
Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Isamu Akasaki
Phys. Status Solidi B, 1700506 (2018)
DOI: 10.1002/pssb.201700506

Quantitative study on energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy
Tomohiro Inaba, Takanori Kojima, Genki Yamashita, Eiichi Matsubara, Brandon Mitchell, Reina Miyagawa, Osamu Eryu, Jun Tatebayashi, Masaaki Ashida, Yasufumi Fujiwara
Journal of Applied Physics 123, 161419 (2018)
DOI: 10.1063/1.5011283

Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation
Toru Akiyama, Shinsuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
Japanese Journal of Applied Physics 57, 04FR08 (2018)
DOI: 10.7567/JJAP.57.04FR08

Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy
Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
MRS Advances 3, 931-936 (2018)
DOI: 10.1557/adv.2018.218

A GaN-Based VCSEL with a Convex Structure for Optical Guiding
Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Physica Status Solidi A, 1700648 (2018)
DOI: 10.1002/pssa.201700648

Polarity inversion of aluminum nitride by direct wafer bonding
Yusuke Hayashi, Ryuji Katayama, Toru Akiyama, Tomonori Ito, Hideto Miyake
Applied Physics Express 11, 31003 (2018)
DOI: 10.7567/APEX.11.031003

Threading Dislocation Reduction in InN Grown with in Situ Surface Modification by Radical Beam Irradiation
Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
Japanese Journal of Applied Physics 57, 035502/1-4 (2018)
DOI: 10.7567/JJAP.57.035502

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl
Applied Physics Letters 112, 041110 (2018)
DOI: 10.1063/1.5010265

Characterization of femtosecond-laser-induced periodic structures on SiC substrates
Reina Miyagawa, Yutaka Ohno, Momoko Deura, Ichiro Yonenaga, Osamu Eryu
Japanese Journal of Applied Physics 57, 25602 (2018)
DOI: 10.7567/JJAP.57.025602

Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study
Toru Akiyama, Kohji Nakamura, Tomonori Ito
Applied Physics Express 11, 025501 (2018)
DOI: 10.7567/APEX.11.025501

Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Journal of Crystal Growth 484, 50-55 (2018)
DOI: 10.1016/j.jcrysgro.2017.12.036

Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy
Ryo Yoshizawa, Hideto Miyake, Kazumasa Hiramatsu
Japanese Journal of Applied Physics 57, 01AD05 (2018)
DOI: 10.7567/JJAP.57.01AD05

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
APL Materials 5, 126102 (2017)
DOI: 10.1063/1.5008913

Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns
Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
Japanese Journal of Applied Physics 56, 125504 (2017)
DOI: 10.7567/JJAP.56.125504

Structures and polarity of III-nitrides: phase diagram calculations using absolute surface and interface energies
Toru Akiyama, Harunobu Nakane, Motoshi Uchino, Kohji Nakamura, Tomonori Ito
Physica Status Solidi B (2017)
DOI: 10.1002/pssb.201700329

High-performance solar-blind Al_0.6Ga_0.4N/Al_0.5Ga_0.5N MSM type photodetector
Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Applied Physics Letters 111, 191103 (2017)
DOI: 10.1063/1.5001979

Femtosecond-laser irradiation onto sapphire substrates in N₂ ambient atmosphere
Reina Miyagawa, Kenzo Goto, Osamu Eryu
Physica Status Solidi C 14, 1700224 (2017)
DOI: 10.1002/pssc.201700224

Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study
Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
Physica Status Solidi B, 1700446 (2017)
DOI: 10.1002/pssb.201700446

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy
Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Applied Physics Letters 111, 162102 (2017)
DOI: 10.1063/1.5008258

Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Journal of Crystal Growth 480, 90-95 (2017)
DOI: 10.1016/j.jcrysgro.2017.10.018

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Scientific Reports 7, 12820 (2017)
DOI: 10.1038/s41598-017-12518-w

DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Applied Physics Letters 111, 141602-1-5 (2017)
DOI: DOI: 10.1063/1.4991608

Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth
Tomonori Ito, Toru Akiyama, Kohji Nakamura
Journal of Crystal Growth 477, 12 (2017)
DOI: 10.1016/j.jcrysgro.2017.03.010

Systematic Theoretical Investigations of Polytypism in AlN
Tomonori Ito, Toru Akiyama, Kohji Nakamura
Physica Status Solidi C, 1700212 (2017)
DOI: 10.1002/pssc.201700212

Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)
Tomonori Ito, Toru Akiyama, Kohji Nakamura
Physica Status Solidi B, 1700241 (2017)
DOI: 10.1002/pssb.201700241

Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Applied Physics Express 10, 101002 (2017)
DOI: 10.7567/APEX.10.101002

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
Atsushi Kobayashi, Masaaki Oseki, Jitsuo Ohta, Hiroshi Fujioka
Physica Status Solidi B, 1700320 (2017)
DOI: 10.1002/pssb.201700320

Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure
Le Duc Anh, Noboru Okamoto, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya
Scientific Reports 7, 8715(1-7) (2017)
DOI: 10.1038/s41598-017-09125-0

Highly selective photocatalytic reduction of carbon dioxide with water over silver-loaded calcium titanate
Akihiko Anzai, Naoto Fukuo, Akira Yamamoto, Hisao Yoshida
Catalysis Communications 100, 134-138 (2017)
DOI: 10.1016/j.catcom.2017.06.046

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth
Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
Japanese Journal of Applied Physics 56, 078003-1-3 (2017)
DOI: 10.7567/JJAP.56.078003

Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions
CH. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu
Journal of Crystal Growth 468, 845-850 (2017)
DOI: 10.1016/j.jcrysgro.2016.09.076

Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
Journal of Crystal Growth 468, 851－855 (2017)
DOI: 10.1016/j.jcrysgro.2016.12.011

Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface
Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 468, 919 (2017)
DOI: 10.1016/j.jcrysgro.2016.10.064

Structures and stability of polar GaN thin films on ScAlMgO₄ substrate: An ab initio-based study
Harunobu Nakane, Toru Akiyama, Kohji Nakamura, Tomonori Ito
Journal of Crystal Growth 468, 93 (2017)
DOI: 10.1016/j.jcrysgro.2016.09.019

Theoretical investigation of nitride nanowire-based quantum-shell lasers
Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
Physica Status Solidi A, 1600867 (2017)
DOI: 10.1002/pssa.201600867

Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy
Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
Japanese Journal of Applied Physics 56, 070304-1-4 (2017)
DOI: 10.7567/JJAP.56.070304

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
Scientific Reports 7, 2944 (2017)
DOI: 10.1038/s41598-017-03151-8

Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
Masaaki Oseki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Physica Status Solidi B, 1700211 (2017)
DOI: 10.1002/pssb.201700211

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
Physica Status Solidi A, 1700244 (2017)
DOI: 10.1002/pssa.201700244

eduction of the magnetic dead layer and observation of tunneling magnetoresistance in La_0.67Sr_0.33MnO₃-based heterostructures with a LaMnO₃ layer
Matou Tatsuya, Takeshima Kento, Anh Le Duc, Seki Munetoshi, Tabata Hitoshi, Tanaka Masaaki, Ohya Shinobu
Applied Physics Letters 110, 212406(1-4) (2017)
DOI: 10.1063/1.4984297

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
Scientific Reports 7, 2112 (2017)
DOI: 10.1038/s41598-017-02431-7

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
CY. Huang, PY. Wu, KS. Chang, YH. Lin, WC. Peng, YY. Chang, JP. Li, HW. Yen, YS. Wu, H. Miyake, HC. Kuo
AIP Advances 7, 55110 (2017)
DOI: 10.1063/1.4983708

Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers
Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
Journal of Vacuum Science and Technology B 35, 04F103-1-5 (2017)
DOI: 10.1116/1.4980048

First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions
Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
Physica Status Solidi B, 1600706 (2017)
DOI: 10.1002/pssb.201600706

Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiN_x intermediate layer
Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Physica Status Solidi C, 1600243 (2017)
DOI: 10.1002/pssc.201600243

Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, Hiroshi Fujioka
Japanese Journal of Applied Physics 56, 031002 (2017)
DOI: 10.7567/JJAP.56.031002

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy
Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu
Japanese Journal of Applied Physics 56, 038002 (2017)
DOI: 10.7567/JJAP.56.038002

Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth
Tomonori Ito, Toru Akiyama
Crystals 7, 46 (2017)
DOI: 10.3390/cryst7020046

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
APL Materials 5, 026102 (2017)
DOI: 10.1063/1.4975617

窒化物半導体MOVPEの熱力学解析～面方位依存性～
寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯
日本結晶成長学会誌 Vol.43 No.4, 233 (2017)

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
Applied Physics Express 10, 025502 (2017)
DOI: 10.7567/APEX.10.025502

Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction
DT. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai
Japanese Journal of Applied Physics 56, 25502 (2017)
DOI: 10.7567/JJAP.56.025502

Electrical properties of Si-doped GaN prepared using pulsed sputtering
Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Applied Physics Letters 110, 042103 (2017)
DOI: 10.1063/1.4975056

High quality Al_0.99Ga_0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Japanese Journal of Applied Physics 56, 015504 (2017)
DOI: 10.7567/JJAP.56.015504

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
Hideto Miyake, Chia-Hung Lin, Kenta Tokoro, Kazumasa Hiramatsu
Journal of Crystal Growth 456, 155-159 (2016)
DOI: 10.1016/j.jcrysgro.2016.08.028

Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
Journal of Crystal Growth (2016)
DOI: 10.1016/j.jcrysgro.2016.12.011

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N₂ or H₂
Rie Togashi, Yumi Kisanuki, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
Japanese Journal of Applied Physics 55, 1202BE (2016)
DOI: 10.7567/JJAP.55.1202BE

High rate growth of In₂O₃ at 1000 °C by halide vapor phase epitaxy
Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, Yoshinao Kumagai
Japanese Journal of Applied Physics 55, 1202B3 (2016)
DOI: 10.7567/JJAP.55.1202B3

High-current-density indium nitride ultrathin-film transistors on glass substrates
Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Applied Physics Letters 109, 142104 (2016)
DOI: 10.1063/1.4964422

Effective approach for accurately calculating individual energy of polar heterojunction interfaces
Toru Akiyama, Harunobu Nakane, Kohji Nakamura, Tomonori Ito
Physical Review B 94, 115302 (2016)
DOI: 10.1103/PhysRevB.94.115302

Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Applied Physics Express 9, 102101 (2016)
DOI: 10.7567/APEX.9.102101

High hole mobility p-type GaN with low residual hydrogen concentration
Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
APL Materials 4, 086103 (2016)
DOI: 10.1063/1.4960485

GaInN-based tunnel junctions with graded layers
Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Applied Physics Express 9, 081005 (2016)
DOI: 10.7567/APEX.9.081005

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
Applied Physics Letters 109, 032106 (2016)
DOI: 10.1063/1.4959777

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, H. Fujioka
APL Materials 4, 076104 (2016)
DOI: 10.1063/1.4959119

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
Scientific Reports 6, 29500 (2016)
DOI: 10.1038/srep29500

Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu
Applied Physics Express 9, 125601 (2016)
DOI: 10.7567/APEX.9.125601

A02

Fixed charges investigation in Al₂O₃/hydrogenated-diamond metal-oxide-semiconductor capacitors
J. W. Liu, H. Oosato, B. Da, Y. Koide
Applied Physics Letters 117, 163502 (2020)
DOI: 10.1063/5.0023086

Science and Technology of Integrated Super-High Dielectric Constant AlO_x/TiO_y Nanolaminates / Diamond for MOS Capacitors and MOSFETs
Jiangwei Liu, Orlando Auciello, Elida de Obaldia, Bo Da, Yasuo Koide
Carbon 172, 112-121 (2020)
DOI: 10.1016/j.carbon.2020.10.031

Enhanced magnetic sensing performance of diamond MEMS magnetic sensor with boron-doped FeGa film
Zilong Zhang, Liwen Sang, *Jian Huang, Waiyan Chen, Linjun Wang, Yukiko Takahashi, Seiji Mitani, Yasuo Koide, Satoshi Koizumi, Meiyong Liao
Carbon 170, 294-301 (2020)
DOI: 10.1016/j.carbon.2020.08.049

Quinoidal bisthienoisatin based semiconductors: Synthesis, characterization, and carrier transport property
Akihiro Kohara, Tsukasa Hasegawa, Minoru Ashizawa, Yoshihiro Hayashi, Susumu Kawauchi, Hiroyasu Masunaga, Noboru Ohta, Hidetoshi Matsumoto
nano select 1, 334-345 (2020)
DOI: 10.1002/nano.202000053

Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS
H. Wu, Z. Zhang, L. Sang, T. Li, J. You, M. Imura, Y. Koide, M.Y. Liao
Corrosion Science 170, 108651 (2020)
DOI: 10.1016/j.corsci.2020.108651

Gate controllability of HfSiO_x/AlGaN/GaN MOS high-electron-mobility transistor
R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki, T. Sato, T. Hashizume
AIP Advances 10, 065215 (2020)
DOI: 10.1063/5.0012687

Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond
Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide
AIP Advances 10, 55114 (2020)
DOI: 10.1063/5.0008167

Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing.
Zilong Zhang, Haihua Wu, Liwen Sang, Yukiko Takahashi, Jian Huang, Linjun Wang, Masaya Toda, Indianto Mohammad Akita, Yasuo Koide, Satoshi Koizumi, Meiyong Liao
ACS Applied Materials & Interfaces 12, 23155-23164 (2020)
DOI: 10.1021/acsami.0c06593

Thermal-assisted contactless photoelectrochemical etching for GaN
Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Hiroki Ogami, Taketomo Sato
Applied Physics Express 13, 046501 (2020)
DOI: 10.35848/1882-0786/ab7e09

Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures.
Z. Zhang, Y. Wu, L. Sang, H. Wu, J. Huang, L. Wang, Y. Takahashi, R. Li, S. Koizumi, M. Toda, I. M. Akita, Y. Koide
Materials Research Letters 8, 180-186 (2020)
DOI: 10.1080/21663831.2020.1734680

Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang
Journal of Alloys and Compounds 829, 154542 (2020)
DOI: 10.1016/j.jallcom.2020.154542

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal?Semiconductor Field-Effect Transistors
J. Liu, T. Teraji, B. Da, H. Ohsato, Y. Koide
IEEE Transactions on Electron Devices 67, 1680-1685 (2020)
DOI: 10.1109/ted.2020.2972979

Improved DC performance and current stability of ultrathin-Al₂O₃/InAlN/GaN MOS-HEMTs with post-metallization-annealing process
S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, Y. Kumazaki, J. Kotani, S. Kaneki, K. Nishiguchi, N. Nakamura, N. Hara, T. Hashizume
Semiconductor Science and Technology 35, 035027 (2020)
DOI: 10.1088/1361-6641/ab708c

Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
Kazuki Miwa, Yuto Komatsu, Masachika Toguchi, Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka, Taketomo Sato
Applied Physics Express 13, 026508 (2020)
DOI: 10.35848/1882-0786/ab6f28

Sensitized Yb³⁺ Luminescence in CsPbCl₃ Film for Highly Efficient Near-Infrared Light-Emitting Diodes
Ayumi Ishii, Tsutomu Miyasaka
Advanced Science 7, 1903142 (2020)
DOI: 10.1002/advs.201903142

Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators.
H. Wu, Z. Zhang, L. Sang, T. Li, J. You, Y. Lu, Y. Koide, M.Y. Liao
Diamond and Related Materials 103, 107711 (2020)
DOI: 10.1016/j.diamond.2020.107711

Tuning the Mechanical Properties of a Polymer Semiconductor by Modulating Hydrogen Bonding Interactions
Yu Zheng, Minoru Ashizawa, Song Zhang, Jiheong Kang,, Shayla Nikzad, Zhiao Yu, Yuto Ochiai, Hung-Chin Wu, Helen Tran, Jaewan Mun, Yu-Qing Zheng, Jeffrey B.-H. Tok, Xiaodan Gu, Zhenan Bao
Chemistry of Materials 32, 5700-5714 (2020)
DOI: 10.1021/acs.chemmater.0c01437

Localized ZnO Growth on a Gold Nanoantenna by Plasmon-Assisted Hydrothermal Synthesis
Hideki Fujiwara, Tatsuro Suzuki, Christophe Pin, Keiji Sasaki
Nano Letters 20, 389 (2019)
DOI: 10.1021/acs.nanolett.9b04073

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas
M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide
Physica Status Solidi A 216, 1900538 (2019)
DOI: 10.1002/pssa.201900538

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Taketomo Sato
IEEE Transactions on Semiconductor Manufacturing 32, 489-495 (2019)
DOI: 10.1109/TSM.2019.2944844

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
J. Liu, T. Teraji, B. Da, Y. Koide
IEEE Electron Device Letters 40, 1748-1751 (2019)
DOI: 10.1109/LED.2019.2942967

Photomultiplying Visible Light Detection by Halide Perovskite Nanoparticles Hybridized with an Organo Eu Complex
Ayumi Ishii, Ajay Kumar Jena, Tsutomu Miyasaka
The Journal of Physical Chemistry Letters 10, 5935-5942 (2019)
DOI: 10.1021/acs.jpclett.9b02432

Control of plasma-CVD SiO₂/InAlN interface by N₂O plasma oxidation
Masamichi Akazawa, Shouhei Kitajima, Yuya Kitawaki
Japanese Journal of Applied Physics 58, 106504 (2019)
DOI: 10.7567/1347-4065/ab3c49

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
Taketomo Sato, Masachika Toguchi, Yuto Komatsu, Keisuke Uemura
IEEE Transactions on Semiconductor Manufacturing 32, 483-488 (2019)
DOI: 10.1109/TSM.2019.2934727

Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
Masachika Toguchi, Kazuki Miwa, Taketomo Sato
Journal of The Electrochemical Society 166, H510-H512 (2019)
DOI: 10.1149/2.0551912jes

プラズモン場を用いたナノ粒子操作
藤原英樹, クリストフパン, 笹木敬司
日本工業出版「光アライアンス」 30, 51-54 (2019)

Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor
Z. Zhang, H. Wu, L. Sang, J. Huang, Y. Takahashi, L. Wang, M. Imura, S. Koizumi, Y. Koide, M. Liao
Carbon 152, 788-795 (2019)
DOI: 10.1016/j.carbon.2019.06.072

Control of plasma-CVD SiO₂/InAlN interface by ultrathin atomic-layer-deposited Al₂O₃ interlayer
Masamichi Akazawa, Shouhei Kitajima
Japanese Journal of Applied Physics 58, SIIB06 (2019)
DOI: 10.7567/1347-4065/ab19a4

High-k oxides on hydrogenated-diamond for metal-oxide-semiconductor field-effect transistors [Invited]
Y. Koide
IEEE International Conference on Microelectronic Test Structures 2019-March, 40-46 (2019)
DOI: 10.1109/ICMTS.2019.8730974

Electrodeless photo-assisted electrochemical etching of GaN using a H₃PO₄-based solution containing S₂O₈^2- ions
Masachika Toguchi, Kazuki Miwa, Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Takehiro Yoshida, Taketomo Sato
Applied Physics Express 12, 66504 (2019)
DOI: 10.7567/1882-0786/ab21a1

Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C
J-W. Liu, H. Oosato, B. Da, T. Teraji, A. Kobayashi, H. Fujioka, Y. Koide
Journal of Physics D: Applied Physics 52, 315104-1-7 (2019)
DOI: 10.1088/1361-6463/ab1e31

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
Keisuke Uemura, Manato Deki, Yoshio Honda, Hiroshi Amano, Taketomo Sato
Japanese Journal of Applied Physics 58, SCCD20 (2019)
DOI: 10.7567/1347-4065/ab06b9

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
J. Liu, H. Ohsato, B. Da, Y. Koide
IEEE Journal of the Electron Devices Society 7, 561-565 (2019)
DOI: 10.1109/jeds.2019.2915250

Single Crystal Diamond Micromechanical and Nanomechanical Resonators
M.Y. Liao, Y. Koide, L. Sang
Topics in Applied Physics 121, 91-121 (2019)
DOI: 10.1007/978-3-030-12469-4_4

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases
M. Liao, L. Sang, T. Shimaoka, M. Imura, S. Koizumi, Y. Koide
Advanced Electronic Materials 5, 1800832-1-8 (2019)
DOI: 10.1002/aelm.201800832

Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source
Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Taketomo Sato
Applied Physics Express 12, 031003 (2019)
DOI: 10.7567/1882-0786/ab043c

Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Y. Ando, S. Kaneki, T. Hashizume
Applied Physics Express 12, 024002 (2019)
DOI: 10.7567/1882-0786/aafded

Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume
Journal of Applied Physics 124, 224502 (2018)
DOI: 10.1063/1.5056194

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN
Satoru Matsumoto, Masachika Toguchi, Kentaro Takeda, Tetsuo Narita, Tetsu Kachi, Taketomo Sato
Japanese Journal of Applied Physics 57, 121001 (2018)
DOI: 10.7567/JJAP.57.121001

Effects of postmetallization annealing on interface properties of Al₂O₃/GaN structures
T. Hashizume, S. Kaneki, T. Oyobiki, Y. Ando, S. Sasaki, K. Nishiguchi
Applied Physics Express 11, 124102 (2018)
DOI: 10.7567/APEX.11.124102

Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation
M. Liao, L. Sang, T. Teraji, S. Koizumi, Y. Koide
Advanced Materials Technologies 4, 1800325-1-8 (2019)
DOI: 10.1002/admt.201800325

Reducing intrinsic energy dissipation in diamond-on-diamond mechanical resonators toward one million quality factor
H. Wu, L. Sang, Y. Li, T. Teraji, T. Li, M. Imura, J. You, Y. Koide, M. Toda, M. Liao
Physical Review Materials 2, 090601-1-6 (2018)
DOI: 10.1103/PhysRevMaterials.2.090601

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy
M. Imura, Y. Ota, R. G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, Y. Koide
Physica Status Solidi (a) 215, 1800282-1-8 (2018)
DOI: 10.1002/pssa.201800282

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.
Jiangwei Liu, Yasuo Koide
SENSORS 18, 813-1-813-17. (2018)
DOI: 10.3390/s18060813

Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by damage-free neutral-beam etching using bio-nano-templates
Yafeng Chen, Takayuki Kiba, Junichi Takayama, Akio Higo, Tomoyuki Tanikawa, Shula Chen, Seiji Samukawa, Akihiko Murayama
Journal of Applied Physics 123, 204305 (2018)
DOI: 10.1063/1.5027627

窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価
井村将隆, バナルライアン, 廖梅勇, 松元隆夫, 熊本明仁, 柴田直哉, 幾原雄一, 小出康夫
日本結晶成長学会誌 45, 1-11 (2018)
DOI: 10.19009/jjacg.3-45-1-05

Annealing effects on hydrogenated diamond NOR logic circuits
J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide
Applied Physics Letters 112, 153501 (2018)
DOI: 10.1063/1.5022590

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
Noritoshi Maeda, Joosun Yun, Masafumi Jo, Hideki Hirayama
Japanese Journal of Applied Physics 57, 04H08-1-4 (2018)
DOI: 10.7567/JJAP.57FH08

State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T. Hashizume, K. Nisgiguchi, S. Kaneki, J. Kuzmik, Z. Yatabe
Materials Science in Semiconductor Processing 78, 85-95 (2018)
DOI: 10.1016/j.mssp.2017.09.028

Surface and bulk electronic structures of unintentionally and Mg-doped In_0.7Ga_0.3N epilayer by hard X-ray photoelectron spectroscopy
Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi
Journal of Applied Physics 123, 095701-1-095701-8 (2018)
DOI: 10.1063/1.5016574

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO₂/diamond interface
Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
Journal of Applied Physics 123, 161599-1-161599-7. (2018)
DOI: 10.1063/1.5002176

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, Takashi Matsuoka
Applied Physics Express 11, 031004 (2018)
DOI: 10.7567/APEX.11.031004

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing
Masamichi Akazawa, Naoshige Yokota, Kei Uetake
AIP Advances 8, 25310 (2018)
DOI: 10.1063/1.5017891

High thermoelectric power factor of high-mobility two-dimensional electron gas
H. Ohta, S. W. Kim, S. Kaneki, A. Yamamoto, T. Hashizume
Advanced Science 5, 1700696 (2018)
DOI: 10.1002/advs.201700696

Effects of Ga supply on the growth of (11-22) AlN on m-plane (10-10) sapphire substrates
Masafumi Jo, Hideki Hirayama
Physica Status Solidi B, 1700418-1-4 (2018)
DOI: 10.1002/pssb.201700418

Improving the light-extraction efficiency of AlGaN DUV-LEDs by using a superlattice hole spreading layer and an Al reflector
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama
Physica Status Solidi A, 1700436-1-5 (2018)
DOI: 10.1002/pssa.201700436

N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka
Applied Physics Express 11, 015503 (2018)
DOI: 10.7567/APEX.11.015503

Disorder induced gap states as a cause of threshold voltage instabilities in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
M. Matys, B. Adamowicz, S. Kaneki, K. Nishiguchi, T. Hashizume
Journal of Applied Physics 122, 224504 (2017)
DOI: 10.1063/1.5000497

High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Masafumi Jo, Takeshi Iwai, Toshiro Morita, Mitsunori Kokubo, Takaharu Tashiro, Ryuichiro Kamimura, Yamato Osada, Hideki Takagi, Hideki Hirayama
Applied Physics Express 11, 012101-1-4 (2018)
DOI: 10.7567/APEX.11.012101

Effect of insertion of ultrathin Al₂O₃ interlayer at metal/GaN interfaces
Masamichi Akazawa, Taito Hasezaki
Physics Status Solidi B 255, 1700382 (2018)
DOI: 10.1002/pssb.201700382

Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen‐Terminated Diamond Field Effect Transistor with AlN/Al₂O₃ Stack Gate
Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide
Physica Status Solidi A 214, 1700463-1-6 (2017)
DOI: 10.1002/pssa.201700463

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS-HEMTs
K. Nishiguchi, S. Kaneki, S. Ozaki, T. Hashizume
Japanese Journal of Applied Physics 56, 101001 (2017)
DOI: 10.7567/JJAP.56.101001

Design for stable lasing of an indirect injection THz quantum cascade laser operating at less than 2 THz
Tsung-Tse Lin, Hideki Hirayama
International Journal of Materials Science and Applications 11, 012101-1-4 (2017)
DOI: 10.11648/j.ijmsa.20170605.11

Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations
Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
Applied Physics Express 10, 082101 (2017)
DOI: 10.7567/APEX.10.082101

Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy
Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka
Physics Status Solidi B, 1600751 (2017)
DOI: 10.1002/pssb.201600751

Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide
Journal of Applied Physics 121, 224502 (2017)
DOI: 10.1063/1.4985066

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator
J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide
Applied Physics Letters 110, 203502 (2017)
DOI: 10.1063/1.4983091

Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking
R. Negishi, K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa, Y. Kobayashi
Applied Physics Letters 110, 201901 (2017)
DOI: 10.1063/1.4983349

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
Yusuke Kumazaki, Satoru Matsumoto, Taketomo Sato
Journal of The Electrochemical Society 164, H477-H483 (2017)
DOI: 10.1149/2.0771707jes

Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura,, Eiichiro Watanabe, Yasuo Koide
IEEE Electron Device Letters 38, 922 (2017)
DOI: 10.1109/led.2017.2702744

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato, Tamotsu Hashizume
Journal of Applied Physics 121, 184501 (2017)
DOI: 10.1063/1.4983013

Improving sensor response using reduced graphene oxide film transistor biosensor by controlling the pyrene adsorption as an anchor molecules
Ryota Negishi, Yuji Matsui, Yoshihiro Kobayashi
Japanese Joournal of Applied Physics 56, 06GE04 (2017)
DOI: 10.7567/JJAP.56.06GE04

Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
Jiangwei Liu, Yasuo Koide
Biosensors and Biodetection 1572, pp217-232 (2017)
DOI: 10.1007/978-1-4939-6911-1_15

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy
Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi
Journal of Applied Physics 121, 095703 (2017)
DOI: 10.1063/1.4977201

Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates
Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata, Hideki Hirayama
Physica Status Solidi C, 1600248 (2017)
DOI: 10.1002/pssc.201600248

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama
Applied Physics Express 10, 031002 (2017)
DOI: 10.7567/APEX.10.031002

Reduction of interface state density at SiO₂/InAlN interface by inserting ultrathin Al₂O₃ and plasma oxide interlayers
Masamichi Akazawa, Atsushi Seino
Physics Status Solidi B 254, 1600691 (2017)
DOI: 10. 1002/pssb.201600691

Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
M. Imura, R. G. Banal, M. Y. Liao, J. Liu, T. Arizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
Journal of Applied Physics 121, 25702 (2017)
DOI: 10.1063/1.4972979

Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer
Joosun Yun, Hideki Hirayama
Journal of Applied Physics 121, 13105 (2017)
DOI: 10.1063/1.4973493

High-quality AlN template grown on a patterned Si (111) substrate
Binh Tinh Tran, Hideki Hirayama, Masafumi Jo, Noritoshi Maeda, Daishi Inoue, Tomoka Kikitsu
Journal of Crystal Growth 426, 225-229 (2017)
DOI: 10.1016/j.jcrysgro.2016.12.100

Nanometer-thin ALD-Al₂O₃ for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE
Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide
Physica Status Solidi A 217, 1600727 (2016)
DOI: 10.1002/pssa.201600727

Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications
Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, Daishi Inoue, Tomoka Kikistu, Hideki Hirayama
Scientific Reports 6, 35681 (2016)
DOI: 10.1038/srep35681

Highly-stable and low-state-density Al₂O₃/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
Shota Kaneki, Joji Ohira, Shota Toiya, Zenji Yatabe, Joel T. Asubar, Tamotsu Hashizume
Applied Physics Letters 109, 162104 (2016)
DOI: 10.1063/1.4965296

Design and fabrication of highperformance diamond triple-gate field-effect transistors
Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide
Scientific Reports 6, 34757 (2016)
DOI: 10.1038/srep34757

High-k ZrO₂/Al₂O₃ bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
Journal of Applied Physics 120, 124504-1 - 124504-4 (2016)
DOI: 10.1063/1.4962851

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al₂O₃ bilayer gate materials for H-terminated diamond field effect transistors
Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide
Journal of Applied Physics 120, 115307-1 - 115307-7 (2016)
DOI: 10.1063/1.4962854

B01

Interface reaction between PbTiO₃ epitaxial thin films and La-doped SrTiO₃ (001) substrates through edge dislocations induced by 90° domain formation
Takumi Shimizu, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno
Journal of the Ceramic Society of Japan 128, 492-500 (2020)
DOI: 10.2109/jcersj2.20028

Epitaxial growth mechanism of Pb(Zr,Ti)O₃ thin films on SrTiO₃ by chemical solution deposition via self-organized seed layer
Takanori Kiguchi, Takumi Shimizu, Takahisa Shiraishi, Toyohiko J. Konno
Journal of the Ceramic Society of Japan 128, 501-511 (2020)
DOI: 10.2109/jcersj2.20027

Growth of double-barrier β-(AlGa)₂O₃/Ga₂O₃ structure and heavily Sn-doped Ga₂O₃ layers using molecular-beam epitaxy
Hironori Okumura
Japanese Journal of Applied Physics 59, 075503 (2020)
DOI: 10.35848/1347-4065/ab9a8b

Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above sub-bandgap energy excitation
Daisuke Uehara, Moe Kikuchi, Bei Ma, Hideto Miyake, Yoshihiro Ishitani
Applied Physics Express 13, 061003 (2020)
DOI: https://doi.org/10.35848/1882-0786/ab8c1c

Structural and electrical characterization of hydrothermally deposited piezoelectric (K,Na)(Nb,Ta)O₃ thick films
Takahisa Shiraishi, Yuta Muto, Yoshiharu Ito, Takanori Kiguchi, Masahiko Nishijima, Hidehiro Yasuda, Hiroshi Funakubo, Toyohiko J. Konno
Journal of Materials Science 55, 8829-8842 (2020)
DOI: 10.1007/s10853-020-04663-x

Energy transport analysis in a Ga_0.84In_0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers
Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani
Applied Physics Letters 116, 142107 (2020)
DOI: https://doi.org/10.1063/5.0003491

Enhanced photovoltaic effects in ferroelectric solid solution thin films with nanodomains
Hiroki Matsuo, Yuji Noguchi, Masaru Miyayama, Takanori Kiguchi, Toyohiko J. Konno
Applied Physics Letters 116, 132901 (2020)
DOI: 10.1063/1.5142880

Enhanced photovoltaic effects in ferroelectric solid solution thin films with nanodomains
Hiroki Matsuo, Yuji Noguchi, Masaru Miyayama, Takanori Kiguchi, Toyohiko J. Konno
Applied Physics Letters 116, 132901 (2020)
DOI: 10.1063/1.5142880

Study on the initial growth mechanism of (ZnO)_1-x(InN)_x using first- principles calculation
Ryota Furuki, Masato Oda, Yuzo Shinozuka
Japanese Journal of Applied Physics 59, SGGK11 (2020)
DOI: 10.7567/1347-4065/ab658e

Switchable third ScFeO₃ polar ferromagnet with YMnO₃-type structure
Y. Hamasaki, T. Katayama, S. Yasui, T. Shiraishi, A. Akama, T. Kiguchi, T. Taniyama, M. Itoh
Journal of Materials Chemistry C 8, 4447 (2020)
DOI: 10.1039/C9TC07006K

Voids and vacancy-type defects in SiO₂/GaN structures probed by monoenergetic positron beams
Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal of Applied Physics 127, 054503 (2020)
DOI: 10.1063/1.5134513

Dry and wet etching for β-Ga₂O₃ Schottky barrier diodes with mesa termination
Hironori Okumura, Taketoshi Tanaka
Japanese Journal of Applied Physics 58, 120902 (2019)
DOI: 10.7567/1347-4065/ab4f90

Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys
Shoji Ishibashi, Akira Uedono, Hiori Kino, Takashi Miyake, Kiyoyuki Terakura
Journal of Physics: Condensed Matter 31, 475401 1-12 (2019)
DOI: 10.1088/1361-648X/ab35a4

Simulating lattice thermal conductivity in semiconducting materials using high-dimensional neural network potential
Minamitani Emi, Ogura Masayoshi, Watanabe Satoshi
Applied Physics Express 12, 095001 (2019)
DOI: 10.7567/1882-0786/ab36bc

Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon
Lu-Chung Chuang, Takanori Kiguchi, Yumiko Kodama, Kensaku Maeda, Keiji Shiga, Haruhiko Morito, Kozo Fujiwara
Scripta Materialia 172, 105-109 (2019)
DOI: 10.1016/j.scriptamat.2019.07.018

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm
Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Iurii Kim, Sami Suihkonen, Tomás Palacios
IEEE Electron Device Letters 40, 1245 (2019)
DOI: 10.1109/LED.2019.2923902

Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams
Akira Uedono, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Physica Status Solidi B 256, 1900104 (2019)
DOI: 10.1002/pssb.201900104

Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dyanamics of excitons in GaN, AlN, and ZnO
Kensuke Oki, Yoshihiro Ishitani
Journal of Applied Physics 125, 205705 (2019)
DOI: 10.1063/1.5092620

Staticks of excitonic energy states based on phononic-excitonic-radiative model
Yoshihiro Ishitani, Kensuke Oki, Hideto Miyake
Japanese Journal of Applied Physics 58, SCCB34 (2019)
DOI: 10.7567/1347-4065/ab09e2

Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
Akira Uedono, Alexandra-Madalina Siladie, Julien Pernot, Bruno Daudin, Shoji Ishibashi
Journal of Applied Physics 125, 175705 (2019)
DOI: 10.1063/1.5088653

nterface structure of Pb(Zr,Ti)O₃/MgO(001) epitaxial thin film in early stage of Stranski?Krastanov growth mode
Takanori Kiguchi, Yumiko Kodama, Takumi Shimizu, Takahisa Shiraishi, Naoki Wakiya, Toyohiko J. Konno
Japanese Journal of Applied Physics 58, SLLA08 (2019)
DOI: 10.7567/1347-4065/ab3b13

Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)₂O₃ (010)
Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios
Japanese Journal of Applied Physics 58, SBBD12 (2019)
DOI: 10.7567/1347-4065/ab002b

Fabrication of an AlN ridge structure using inductively coupled Cl₂/BCl₃ plasma and a TMAH solution
Hironori Okumura
Japanese Journal of Applied Physics 58, 26502 (2019)
DOI: 10.7567/1347-4065/aaf78b

Electronic structure of (ZnO)_1-x(InN)_x alloys calculated by interacting quasi-band theory
Ryota Furuki, Masato Oda, Yuzo Shinozuka
Japanese Journal of Applied Physics 58, 21002 (2019)
DOI: 10.7567/1347-4065/aaf56f

Selective thermal radiation at longitudinal optical phonon energy under geometric condition of metal-semiconductor mesa stripe structures
Yoshihiro Ishitani, Tomoyuki Aoki, Hidenori Funabashi, Ken Morita
Applied Physics Letters 113, 192105 (2018)
DOI: 10.1063/1.5047458

Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO_1.5-doped HfO₂ epitaxial thin films
Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno
Japanese Journal of Applied Physics 57, 11UF16 (2018)
DOI: 10.7567/JJAP.57.11UF16

N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications
Jori Lemettinen, Hironori Okumura, Tomás Palacios, Sami Suihkonen
Applied Physics Express 11, 101002 (2018)
DOI: 10.7567/APEX.11.101002

Vacancy-type defects in Al₂O₃/GaN structure probed by monoenergetic positron beams
A Uedono, T. Nabatame, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, S. Ishibashi
Journal of Applied Physics 123, 155302(1-8) (2018)
DOI: 10.1063/1.5026831

Terahertz pulse generation by the tilted pulse front technique using an M-shaped optical system
Ken Morita, Kento Shiozawa, Koji Suizu, Yoshihiro Ishitani
Japanese Journal of Applied Physics 57, 50304 (2018)
DOI: 10.7567/JJAP.57.050304

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy
Takeaki Hamachi, Shotaro Takeuchi, Tetsuya Tohei, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Akira Sakai
Journal of Applied Physics 123, 161417 (2018)
DOI: 10.1063/1.5011345

AlN metal-semiconductor field-effect transistors using Si-ion implantation
Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomás Palacios
Japanese Journal of Applied Physics 57, 04FR11 (2018)
DOI: 10.7567/JJAP.57.04FR11

Subnanopore filling during water vapor adsorption on microporous silica thin films as seen by low-energy positron annihilation
Kenji Ito, Shigeru Yoshimoto, Brian E. O'Rourke, Nagayasu Oshima, Kazuhiro Kumaga
Applied Physics Letters 112, 083701 (2018)
DOI: 10.1063/1.5021105

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
J. Lemettinen, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen
Journal of Crystal Growth 487, 50 (2018)
DOI: 10.1016/j.jcrysgro.2018.02.020

X-ray electron density investigation of chemical bonding in van der Waals materials
Hidetaka Kasai, Kasper Tolborg, Mattia Sist, Jiawei Zhang, Venkatesha R. Hathwar, Mette Ø. Filsø, Simone Cenedese, Kunihisa Sugimoto, Jacob Overgaard, Eiji Nishibori, Bo B. Iversen
Nature Materials 17, 249 (2018)
DOI: 10.1038/s41563-017-0012-2

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
J. Lemettinen, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen
Journal of Crystal Growth 487, 12 (2018)
DOI: 10.1016/j.jcrysgro.2018.02.013

Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
S. Iwashita, T. Moriya, T. Kikuchi, M. Kagaya, N. Noro, T. Hasegawa, A. Uedono
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 021515(1-8) (2018)
DOI: 10.1116/1.5001552

Retreat from Stress: Rattling in a Planar Coordination
Koichiro Suekuni, Chul Ho Lee, Hiromi I. Tanaka, Eiji Nishibori, Atsushi Nakamura, Hidetaka Kasai, Hitoshi Mori, Hidetomo Usui, Masayuki Ochi, Takumi Hasegawa, Mitsutaka Nakamura, Seiko Ohira-Kawamura, Tatsuya Kikuchi, Koji Kaneko, Hirotaka Nishiate, Katsuaki Hashikuni, Yasufumi Kosaka, Kazuhiko Kuroki, Toshiro Takabatake
Advanced Materials 30, 1706230 (2018)
DOI: 10.1002/adma.201706230

Valence band edge tail states and band gap defect levels of GaN bulk and In _x Ga_1- _x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy
M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, T. Honda
Applied Physics Express 11, 021002(1-4) (2018)
DOI: 10.7567/APEX.11.021002

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
Kazuki Shida, Shotaro Takeuchi, Tetsuya Tohei, Hideto Miyake, Kazumasa Hiramatsu, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
Journal of Applied Physics 123, 161563 (2018)
DOI: 10.1063/1.5011291

Carrier trapping by vacancy-type defects in Mg-implanted GaN studied using monoenergetic positron beams
A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, S. Ishibashi
Phys. Stat. Sol. B 2017, 1700521(1-9) (2017)
DOI: 10.1002/pssb.201700521

Two-Component Density Functional Study of Positron-Vacancy Interaction in Metals and Semiconductors
Shoji Ishibashi
Acta Physica Polonica A 132, 1602-1605 (2017)
DOI: 10.12693/APhysPolA.132.1602

Study of Li atom diffusion in amorphous Li₃PO₄ with neural network potential
Wenwen Li, Yasunobu Ando, Emi Minamitani, Satoshi Watanabe
The Journal of Chemical Physics 147, 214106 (2017)
DOI: 10.1063/1.4997242

Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures
Hironiri Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, Yoshihiro Ishitani
Journal of Physics D: Applied Physics 51, 15105 (2017)
DOI: /10.1088/1361-6463/aa9918

Ferroelectric and Magnetic Properties in Room-Temperature Multiferroic Ga_xFe₂₋_xO₃ Epitaxial Thin Films
Tsukasa Katayama, Shintaro Yasui, Yosuke Hamasaki, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Mitsuru Itoh
Advanced Functional Materials 28, 1704789 (2018)
DOI: 10.1002/adfm.201704789

Population decay time and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients
Kensuke Oki, Bei Ma, Yoshihiro Ishitani
Physical Review B 96, 205204 (2017)
DOI: 10.1103/PhysRevB.96.205204

Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles
L. V. Devi, S. Sellaiyan, T. Selvalakshmi, H.J. Zhang, A. Uedono, K. Sivaji, S. Sankar
Advanced Powder Technology 28, 3026-3038 (2017)
DOI: 10.1016/j.apt.2017.09.013

Strain-induced nanostructure of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ on SrTiO₃ epitaxial thin films with low PbTiO₃ concentration
Takanori Kiguchi, Cangyu Fan, Takahisa Shiraishi, Toyohiko J. Konno
Japanese Journal of Applied Physics 56, 10PB12 (2017)
DOI: 10.7567/JJAP.56.10PB12

Control of dislocation morphology and lattice distortion in Na-flux GaN crystals
Shotaro Takeuchi, Yuki Mizuta, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
Journal of Applied Physics 122, 105303 (2017)
DOI: 10.1063/1.4989647

Cu diffusion in amorphous Ta₂O₅ studied with a simplified neural network potential
Wenwen Li, Yasunobu Ando, Satoshi Watanabe
Journal of the Physical Society of Japan 86, 104004 (2017)
DOI: 10.7566/JPSJ.86.104004

First-principles calculation of electron-phonon coupling at a Ga vacancy in GaN
T. Tsujio, M. Oda, Y. Shinozuka
Japanese Journal of Applied Physics 56, 091001 (2017)
DOI: 10.7567/JJAP.56.091001

Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, M. Sumiya
Thin Solid Films 639, 78-83 (2017)
DOI: 10.1016/j.tsf.2017.08.021

Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing
S. R. Aid, T. Uneme, N. Wakabayashi, K. Yamazaki, A Uedono, S. Matsumoto
Physica Status Solidi A 214, 1700225(1-5) (2017)
DOI: 10.1002/pssa.201700225

Crystal structure and magnetism in κ-Al₂O₃-type Al_xFe_2-xO₃ films on SrTiO₃(111)
Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Tomoyasu Taniyama, Mitsuru Itoh
Journal of Applied Physics 122, 15301 (2017)
DOI: 10.1063/1.4990947

Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation
A. Uedono, M. Imanishi, M. Imade, M. Yoshimura, S. Ishibashi, M. Sumiya, Y. Mori
Journal of Crystal Growth 475, 261-265 (2017)
DOI: 10.1016/j.jcrysgro.2017.06.027

Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction
Kazuki Shida, Shotaro Takeuchi, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai
ACS Applied Materials & Interfaces (2017)
DOI: 10.1021/acsami.7b01309

Effect of La doping on the lattice defects and photoluminescence properties of CuO
L. V. Devi, T. Selvalakshmi, S. Sellaiyan, A. Uedono, K. Sivaji, S. Sankar
Journal of Alloys and Compounds 709, 496-504 (2017)
DOI: 10.1016/j.jallcom.2017.03.148

Influence of Si wafer thinning processes on (sub)surface defects
F. Inoue, A. Jourdain, L. Peng, A. Phommahaxay, J. De Vos, K. J. Rebibis, A. Miller, E. Sleeckx, E. Beyne, A. Uedono
Applied Surface Science 404, 82-87 (2017)
DOI: 10.1016/j.apsusc.2017.01.259

Probing the effect of point defects on the leakage blocking capability of Al_0.1Ga_0.9/Si structures using a monoenergetic positron beam
A. Uedono, M. Zhao, E. Simoen
J. Appl. Phys. 120, 215702(1-7) (2016)
DOI: 10.1063/1.4970984

Electronic structure calculation of Si_1-xSn_x compound alloy using interacting quasi‐band theory
Masato Oda, Yukina Kuroda, Ayaka Kishi, Yuzo Shinozuka
Physica Status Solidi B 254, 1600519 (2017)
DOI: 10.1002/pssb.201600519

Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure
Y. Mizushima, Y. Kim, T. Nakamura, A. Uedono, T. Ohba
Microelectronic Engineering 167, 23-31 (2017)
DOI: 10.1016/j.mee.2016.10.010

Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique
Shohei Kamada, Shotaro Takeuchi, Dinh Thanh Khan, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, and Akira Sakai
Applied Physics Express 9, 111001 (2016)
DOI: 10.7567/APEX.9.111001

Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga_0.5In_0.5P films
Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
Journal of Physics D: Applied Physics 49, 351107 (2016)
DOI: 10.1088/0022-3727/49/37/375107

Investigation on photoluminescence properties and defect chemistry of GdAlO₃:Dy³⁺ Ba²⁺ phosphors
T. Selvalakshmi, S. Sellaiyan, A. Uedono, T. Semba, A. C. Bose
Optical Materials 58, 524-530 (2016)
DOI: 10.1016/j.optmat.2016.06.044

B02

Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method
K. Kojima, S. F. Chichibu
Applied Physics Express 13, 121005 (2020)
DOI: 10.35848/1882-0786/abcd73

Self-formed compositional superlattices triggered by cation orderings in m-plane Al_1-xIn_xN on GaN
Shigefusa F Chichibu, Kohei Shima, Kazunobu Kojima, Yoshihiro Kangawa
Scientific Reports 10, 18570 (2020)
DOI: 10.1038/s41598-020-75380-3

Urbach-Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy
K. Kojima, S. F. Chichibu
Applied Physics Letters 117, 171103 (2020)
DOI: 10.1063/5.0028134

High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells
Hideaki Murotani, Ryohei Tanabe, Keisuke Hisanaga, Akira Hamada, Kanta Beppu, Noritoshi Maeda, M. Ajmal Khan, Masafumi Jo, Hideki Hirayama, Yoichi Yamada
Applied Physics Letters 117, 162106/1-5 (2020)
DOI: 10.1063/5.0027697

Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy
K. Kojima, K. Ikemura, S. F. Chichibu
Applied Physics Express 13, 105504 (2020)
DOI: 10.35848/1882-0786/abb788

Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells
Hideaki Murotani, Hiroyuki Miyoshi, Ryohei Takeda, Hiroki Nakao, M. Ajmal Khan, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama, Yoichi Yamada
Journal of Applied Physics 128, 105704 (2020)
DOI: 10.1063/5.0015554

Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya
Japanese Journal of Applied Physics 59, 91003 (2020)
DOI: 10.35848/1347-4065/abaebc

Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications
K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
Applied Physics Letters 117, 031103 (2020)
DOI: 10.1063/5.0013112

Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation
Nobuyuki Ohtsuka, Masato Oda, Takashi Eshita, Ichiro Tanaka, Chihiro Itoh
Japanese Journal of Applied Physics 59, SGGK16 (2020)
DOI: 10.35848/1347-4065/ab6e07

Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors
Shigefusa F. Chichibu, Yoichi Ishikawa, Kouji Hazu, Kentaro Furusawa
Japanese Journal of Applied Physics 59, 020501 1-17 (2020)
DOI: 10.7567/1347-4065/ab5ef4

Control of p-type conductivity at AlN surfaces by carbon doping
Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 13, 015512 (2020)
DOI: 10.7567/1882-0786/ab6589

Deep-ultraviolet near band-edge emissions from nano-polycrystalline diamond
Ryota Ishii, Rei Fukuta, Fumitaro Ishikawa, Masafumi Matsushita, Hiroaki Ohfuji, Toru Shinmei, Tetsuo Irifune, Mitsuru Funato, Yoichi Kawakami
High Pressure Research 40, 140 (2020)
DOI: 10.1080/08957959.2019.1702658

Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy
Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami
Japanese Journal of Applied Physics 59, 010903 (2020)
DOI: 10.7567/1347-4065/ab5b77

Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display
Katsumi Kishino, Naoki Sakakibara, Kazuki Narita, Takao Oto
Applied Physics Express 13, 014003 (2020)
DOI: 10.7567/1882-0786/ab5ad3

Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals
Kazunobu Kojima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Hajime Fujikura, Shigefusa F. Chichibu
Applied Physics Express 13, 012004 (2020)
DOI: 10.7567/1882-0786/ab5adc

Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates
Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
Physica Status Solidi A 217, 1900764 (2020)
DOI: 10.1002/pssa.201900764

Column diameter dependence of the strain relaxation effect in GaN/AlGaN quantum wells on GaN nanocolumn arrays
Takao Oto, Yutaro Mizuno, Koji Yamano, Jun Yoshida, Katsumi Kishino
Applied Physics Express 12, 125001 (2019)
DOI: 10.7567/1882-0786/ab51e1

In-plane optical polarization and dynamic properties of the near-band-edge emission of anm-plane freestanding AlN substrate and a homoepitaxial film
S. F. Chichibu, K. Kojima, K. Hazu, Y. Ishikawa, K. Furusawa, S. Mita, R. Collazo, Z. Sitar, A. Uedono
Applied Physics Letters 115, 151903 1-5 (2019)
DOI: 10.1063/1.5116900

Self-limiting growth of ultrathin GaN/AlN quantum wells for highly efficient deep ultraviolet emitters
Hirotsugu Kobayashi, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
Advanced Optical Materials 7, 1900860 (2019)
DOI: 10.1002/adom.201900860

Internal quantum efficiency of radiation in a bulk CH₃NH₃PbBr₃ perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy
K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, S. F. Chichibu
APL Materials 7, 071116 (2019)
DOI: 10.1063/1.5110652

Pushing the limits of deep-ultraviolet scanning near-field optical microscopy
Ryota Ishii, Mitsuru Funato, Yoichi Kawakami
APL Photonics 4, 070801 (2019)
DOI: 10.1063/1.5097865

Electronic structures of a cerasome surface model
Masato Oda
Japanese Journal of Applied Physics 58, SIID04 (2019)
DOI: 10.7567/1347-4065/ab1b61

Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates
Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
Journal of Crystal Growth 522, 68 (2019)
DOI: 10.1016/j.jcrysgro.2019.06.010

InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer
Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Kunihiko Tasai, Atsushi A. Yamaguchi, Shigetaka Tomiya
Japanese Journal of Applied Physics 58, SCCB28 (2019)
DOI: 10.7567/1347-4065/ab0f11

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi, Akira Uedono
Japanese Journal of Applied Physics 58, SC0802 (2019)
DOI: 10.7567/1347-4065/ab0d06

Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions
Masato Oda
Japanese Journal of Applied Physics 58, SCCC16 (2019)
DOI: 10.7567/1347-4065/ab07a7

Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
Kazunobu Kojima, Kenichiro Ikemura, Shigefusa F. Chichibu
Applied Physics Express 12, 062010 (2019)
DOI: 10.7567/1882-0786/ab2165

Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions
Satoshi Kurai, Ayumu Wakamatsu, Yoichi Yamada
Japanese Journal of Applied Physics 58, SCCB13/1-6 (2019)
DOI: 10.7567/1347-4065/ab0cfb

Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination
Hideaki Murotani, Kazunori Shibuya, Ayumu Yoneda, Yuki Hashiguchi, Hiroyuki Miyoshi, Satoshi Kurai, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
Japanese Jpurnal of Applied Physics 58, SCCB02/1-5 (2019)
DOI: 10.7567/1347-4065/ab040b

Impact of microscopic In fluctuations on the optical properties of In_xGa_1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation
Atsushi Sakaki, Mitsuru Funato, Munehiko Miyano, Toshiyuki Okazaki, Yoichi Kawakami
Scientific Reports 9, 3733 (2019)
DOI: 10.1038/s41598-019-39086-5

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, S. F. Chichibu
Applied Physics Letters 114, 011102 (2019)
DOI: 10.1063/1.5063735

Red-emitting In_xGa_1-xN/In_yGa_1-yN quantum wells grown on lattice-matched In_yGa_1-yN/ScAlMgO₄(0001) templates
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 12, 011007 (2019)
DOI: 10.7567/1882-0786/aaf4b1

Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy
Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami
Japanese Journal of Appllied Physics 58, 010904 (2019)
DOI: 10.7567/1347-4065/aaef3e

Dominant nonradiative recombination paths and their activation processes in Al_xGa_1-xN-related materials
Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
Physical Review Applied 10, 064027 (2018)
DOI: 10.1103/PhysRevApplied.10.064027

Al_xGa_1-_xN‐Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination
Minehiro Hayakawa, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
Advanced Optical Materials 7, 1801106 (2019)
DOI: 10.1002/adom.201801106

Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes
Hideaki Murotani, Yoichi Yamada
Japanese Journal of Applied Physics 58, 011003/1-6 (2019)
DOI: 10.7567/1347-4065/aaec8e

Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H
K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, S. F. Chichibu
Applied Physics Letters 113, 191901 (2018)
DOI: 10.1063/1.5050967

Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells om moderate temperature GaN pit expansion layers
Satoshi Kurai, Kohei Okawa, Ryoga Makio, Genki Nobata, Junji Gao, Kohei Sugimoto, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
Journal of Applied Physics 124, 083107/1-7 (2018)
DOI: 10.1063/1.5043578

Growth mechanism of polar-plane-free faceted InGaN quantum wells
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakam
IEICE Transactions on Electronics E101-C, 532 (2018)
DOI: 10.1587/transele.E101.C.532

A novel method to measure absolute internal quantum efficiency in III-nitride semiconductors by simultaneous photo-acoustic and photoluminescence spectroscopy
Atsushi A. Yamaguchi, Kohei Kawakami, Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Yuya Kanitani, Shigetaka Tomiya
IEICE Transactions on Electronics E101-C, 527 (2018)
DOI: 10.1587/transele.E101.C.527

Femtosecond laser-assisted thermal annealing of Ni electrode on SiC substrate
Hiroki Kawakami, Yoshiki Naoi, Takuro Tomita
AIP Advances 8, 065204 (2018)
DOI: 10.1063/1.5036804

Temperature dependence of excitonic transitions in Al_0.60Ga_0.40N/Al_0.70Ga_0.30N multiple quantum wells from 4 to 750 K
Hideaki Murotani, Yuya Hayakawa, Kazuki Ikeda, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Journal of Applied Physics 123, 205705/1-7 (2018)
DOI: 10.1063/1.5023996

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, A. Uedono
Applied Physics Letters 112, 211901 (2018)
DOI: 10.1063/1.5030645

>Al_xGa_1-_xNN-based semipolar deep ultraviolet light-emitting diodes
Ryota Akaike, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 11, 061001 (2018)
DOI: 10.7567/APEX.11.061001

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells
Satoshi Kurai, Nobuto Imura, Li Jin, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Japanese Journal of Applied Physics 57, 060311 (2018)
DOI: 10.7567/JJAP.57.060311

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Shoji Ishibashi
Journal of Applied Physics 123, 161413 1-13 (2018)
DOI: 10.1063/1.5012994

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals
Shigefusa F. Chichibu, Youichi Ishikawa, Hiroko Kominami, Kazuhiko Hara
Journal of Applied Physics 123, 065104 1-8 (2018)
DOI: 10.1063/1.5021788

Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells
Atsushi Sakaki, Mitsuru Funato, Tomoaki Kawamura, Jun Araki, Yoichi Kawakami
Applied Physics Express 11, 031001 (2018)
DOI: 10.7567/APEX.11.031001

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al_0.61Ga_0.39N Epitaxial Layer
Hideaki Murotani, Kazuki Ikeda, Takuto Tsurumaru, Ryota Fujiwara, Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Physica Status Solidi B, 1700374 (2018)
DOI: 10.1002/pssb.201700374

Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface
Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Takuya Hashimoto, Hiroki Kawakami, Yuki Fuchikami, Hiromu Hisazawa, Yasuhiro Tanaka
Applied Physics Express 11, 016502 (2018)
DOI: 10.7567/APEX.11.016502

Potential barrier formed around dislocations in InGaN quantum well structures by spot cathodoluminescence measurements
Satoshi Kurai, Shota Higaki, Nobuto Imura, Kohei Okawa, Ryoga Makio, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
Physica Status Solidi B, 1700358 (2017)
DOI: 10.1002/pssb.201700358

Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells
Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 10, 121001 (2017)
DOI: 10.7567/APEX.10.121001

Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells
Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada
Applied Physics Letters 111, 172105 (2017)
DOI: 10.1063/1.4998798

Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond
Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, Yasuhiro Tanaka
Japanese Journal of Applied Physics 56, 112701 (2017)
DOI: 10.7567/JJAP.56.112701

Spatially resolved spectroscopy of blue and green InGaN quantum wells by scanning near-field optical microscopy
Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
Physica Status Solidi B, 1700322 (2017)
DOI: 10.1002/pssb.201700322

Origin of temperature-induced luminescence peak shifts from semipolar (11-22) InGaN quantum wells
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami
Physical Review B 96, 125305 (2017)
DOI: 10.1103/PhysRevB.96.125305

First-principles calculation of electron?phonon coupling at a Ga vacancy in GaN
Takeshi Tsujio, Masato Oda, Yuzo Shinozuka
Japanese Journal of Applied Physics 56, 91001 (2017)
DOI: 10.7567

Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals
Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shigefusa F. Chichibu
Applied Physics Letters 111, 032111 (2017)
DOI: 10.1063/1.4995398

Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 10, 071003 (2017)
DOI: 10.7567/APEX.10.071003

High-efficiency light emission by means of exciton-surface-plasmon coupling
Koichi Okamoto, Mitsuru Funato, Yoichi Kawakami, Kaoru Tamada
Journal of Photochemistry and Photobiology C: Photochemistry Reviews 32, 58 (2017)
DOI: 10.1016/j.jphotochemrev.2017.05.005

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Mitsuaki Shimizu, Tokio Takahashi, Shoji Ishibashi, Akira Uedono, Shigefusa F. Chichibu
Applied Physics Express 10, 061002 (2017)
DOI: 10.7567/APEX.10.061002

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer
Hiroshi Nakai, Mutsumi Sugiyama, Shigefusa F. Chichibu
Applied Physics Letters 110, 181102 (2017)
DOI: 10.1063/1.4982653

Effects of Al and N₂ flow sequences on the interface formation of AlN on sapphire by EVPE
Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
Crystals 7, 123 (2017)
DOI: 10.3390/cryst7050123

Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells
Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Applied Physics Express 10, 051003 (2017)
DOI: 10.7567/APEX.10.051003

Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates
Mitsuru Funato, Mami Shibaoka, Yoichi Kawakami
Journal of Applied Physics 121, 85304 (2017)
DOI: 10.1063/1.4977108

Deep ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells
Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
Applied Physics Express 10, 031001 (2017)
DOI: 10.7567/APEX.10.031001

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al_0.60Ga_0.40N/Al_0.70Ga_0.30N multiple quantum wells
Hideaki Murotani, Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Applied Physics Express 10, 021002 (2017)
DOI: 10.7567/APEX.10.021002

A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction Al_xGa_1-_xN multiple quantum wells
Kazunobu Kojima, Kentaro Furusawa, Yoshiki Yamazaki, Hideto Miyake, Kazumasa Hiramatsu, Shigefusa F. Chichibu
Applied Physics Express 10, 015802 (2017)
DOI: 10.7567/APEX.10.015802

Defect-Resistant Radiative Performance of m-Plane Immiscible Al_1-_xIn_xN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters
Shigefusa F. Chichibu, Kazunobu Kojima, Akira Uedono, Yoshitaka Sato
Advanced Materials 29, 1603644 (2017)
DOI: 10.1002/adma.201603644

Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells
Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara
Applied Physics Letters 109, 182101 (2016)
DOI: 10.1063/1.4965844

Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy
Yoichi Kawakami, Akio Kaneta, Akira Hashiya, Mitsuru Funato
Physical Review Applied 6, 44018 (2016)
DOI: 10.1103/PhysRevApplied.6.044018

Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy
PeiTsen Wu, Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
Crystal Growth & Design 16, 6337 (2016)
DOI: 10.1021/acs.cgd.6b00979

文部科学省科学研究費助成事業「新学術領域研究」平成28－平成32年度　特異構造の結晶科学　完全性と不完全性の協奏で拓く新機能エレクトロニクス

研究成果

発表論文

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