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発表論文

[A01] [A02] [B01] [B02]

A01

  1. Realization of honeycomb structures in octet A N B8-N binary compounds under two-dimensional limit
    Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
    Applied Physics Express 12, 125501 (2019)
    DOI: 10.7567/1882-0786/ab524c

  2. Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE
    Yuya Inatomi, Yoshihiro Kangawa
    Applied Surface Science 502, 144205 (2020)
    DOI: 10.1016/j.apsusc.2019.144205

  3. Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers
    Masumi Sakamoto, Atsushi Kobayashi, Yoshino K. Fukai, Kohei Ueno, Yuki Tokumoto, Hiroshi Fujioka
    Journal of Applied Physics 126, 075701 (2019)
    DOI: 10.1063/1.5117307

  4. Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
    Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    AIP Advances 9, 075123 (2019)
    DOI: 10.1063/1.5103185

  5. Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)
    Kazuhiro Yonemoto, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    Japanese Journal of Applied Physics 58, SIIB25 (2019)
    DOI: 10.7567/1347-4065/ab19ad

  6. The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution
    Shinji Yasue, Kosuke Sato, Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki
    Japanese Journal of Applied Physics 58, SCCC30 (2019)
    DOI: 10.7567/1347-4065/ab112a

  7. 450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers
    Kei Arakawa, Kohei Miyoshi, Ryosuke Iida, Yuki Kato, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Japanese Journal of Applied Physics 58, SCCC28 (2019)
    DOI: 10.7567/1347-4065/ab12ca

  8. Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy
    Shunya Otsuki, Daiki Jinno, Hisayoshi Daicho, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
    Japanese Journal of Applied Physics 58, SC1054 (2019)
    DOI: 10.7567/1347-4065/ab07aa

  9. Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures
    Toru Akiyama, Motoshi Uchino, Kohji Nakamura, Tomonori Ito, Shiyu Xiao, Hideto Miyake
    Japanese Journal of Applied Physics 58, SCCB30 (2019)
    DOI: 10.7567/1347-4065/ab0d01

  10. Theoretical investigations on the structural stability and miscibility in BAlN and BGaN alloys: bond-order interatomic potential calculations
    Yuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    Japanese Journal of Applied Physics 58, SCCB21 (2019)
    DOI: 10.7567/1347-4065/ab06af

  11. Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions
    Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa
    Japanese Journal of Applied Physics 58, SC1014 (2019)
    DOI: 10.7567/1347-4065/ab040a

  12. Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate
    Shinnosuke Tsumuki, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    Japanese Journal of Applied Physics 58, SC1009 (2019)
    DOI: 10.7567/1347-4065/ab06b1

  13. AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
    Kyohei Nakamura, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 9, 6254 (2019)
    DOI: 10.1038/s41598-019-42822-6

  14. CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films
    Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa
    Materials 12, 972 (2019)
    DOI: 10.3390/ma12060972

  15. Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study
    Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Nanotechnology 30, 234002 (2019)
    DOI: 10.1088/1361-6528/ab06d0

  16. Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoint
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Journal of Crystal Growth 512, 41-46 (2019)
    DOI: 10.1016/j.crysgro.2019.01.028

  17. Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides
    Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
    Physical Review Materials 3, 23401 (2019)
    DOI: 10.1103/PhysRevMaterials.3.023401

  18. An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(111) substrate
    Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 511, 89 (2019)
    DOI: doi.org/10.1016/j.jcrysgro.2019.01.036

  19. Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
    Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    Applied Physics Letters 114, 032102 (2019)
    DOI: 10.1063/1.5079673

  20. Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy
    Y. Inatomi, Y. Kangawa, A. Pimpinelli, T. L. Einstein
    Phsical Review Materials 3, 13401 (2019)
    DOI: 10.1103/PhysRevMaterials.3.013401

  21. Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth
    Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 510, 7-12 (2019)
    DOI: 10.1016/j.jcrysgro.2018.12.011

  22. Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
    Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka
    APL Materials 6, 111103 (2018)
    DOI: 10.1063/1.5051555

  23. First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth
    Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto, Toru Akiyama
    Japanese Journal of Applied Physics 57, 115504 (2018)
    DOI: 10.7567/JJAP.57.115504

  24. Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys
    Yuya Hasegawa, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 504, 13-16 (2018)
    DOI: 10.1016/j.jcrysgro.2018.09.016

  25. Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)
    Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
    Physica Status Solidi A, 1800476 (2018)
    DOI: 10.1002/pssa.201800476

  26. An ab initio approach to polarity inversion of AlN and GaN films on AlN(000-1) substrate with Al overlayers: an insight from interface energies
    Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Japanese Journal Applied Physics 57, 98001 (2018)
    DOI: 10.7567/JJAP.57.098001

  27. Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation
    Fumihiro Fujie, Shunta Harada, Haruhiko Koizumi, Kenta Murayama, Kenji Hanada, Miho Tagawa, Toru Ujihara
    Applied Physics Letters 113, 012101 (2018)
    DOI: 10.1063/1.5038189

  28. Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
    Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
    Journal of Crystal Growth 492, 39 (2018)
    DOI: 10.1016/j.jcrysgro.2018.04.009

  29. Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
    Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto
    Journal of Applied Physics 124, 95702 (2018)
    DOI: 10.1063/1.5042561

  30. Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing
    Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Isamu Akasaki
    Phys. Status Solidi B, 1700506 (2018)
    DOI: 10.1002/pssb.201700506

  31. Quantitative study on energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy
    Tomohiro Inaba, Takanori Kojima, Genki Yamashita, Eiichi Matsubara, Brandon Mitchell, Reina Miyagawa, Osamu Eryu, Jun Tatebayashi, Masaaki Ashida, Yasufumi Fujiwara
    Journal of Applied Physics 123, 161419 (2018)
    DOI: 10.1063/1.5011283

  32. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
    Toru Akiyama, Shinsuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
    Japanese Journal of Applied Physics 57, 04FR08 (2018)
    DOI: 10.7567/JJAP.57.04FR08

  33. Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy
    Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
    MRS Advances 3, 931-936 (2018)
    DOI: 10.1557/adv.2018.218

  34. A GaN-Based VCSEL with a Convex Structure for Optical Guiding
    Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Physica Status Solidi A, 1700648 (2018)
    DOI: 10.1002/pssa.201700648

  35. Polarity inversion of aluminum nitride by direct wafer bonding
    Yusuke Hayashi, Ryuji Katayama, Toru Akiyama, Tomonori Ito, Hideto Miyake
    Applied Physics Express 11, 31003 (2018)
    DOI: 10.7567/APEX.11.031003

  36. Threading Dislocation Reduction in InN Grown with in Situ Surface Modification by Radical Beam Irradiation
    Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi
    Japanese Journal of Applied Physics 57, 035502/1-4 (2018)
    DOI: 10.7567/JJAP.57.035502

  37. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
    N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl
    Applied Physics Letters 112, 041110 (2018)
    DOI: 10.1063/1.5010265

  38. Characterization of femtosecond-laser-induced periodic structures on SiC substrates
    Reina Miyagawa, Yutaka Ohno, Momoko Deura, Ichiro Yonenaga, Osamu Eryu
    Japanese Journal of Applied Physics 57, 25602 (2018)
    DOI: 10.7567/JJAP.57.025602

  39. Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study
    Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Applied Physics Express 11, 025501 (2018)
    DOI: 10.7567/APEX.11.025501

  40. Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
    Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Journal of Crystal Growth 484, 50-55 (2018)
    DOI: 10.1016/j.jcrysgro.2017.12.036

  41. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy
    Ryo Yoshizawa, Hideto Miyake, Kazumasa Hiramatsu
    Japanese Journal of Applied Physics 57, 01AD05 (2018)
    DOI: 10.7567/JJAP.57.01AD05

  42. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
    Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 5, 126102 (2017)
    DOI: 10.1063/1.5008913

  43. Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns
    Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
    Japanese Journal of Applied Physics 56, 125504 (2017)
    DOI: 10.7567/JJAP.56.125504

  44. Structures and polarity of III-nitrides: phase diagram calculations using absolute surface and interface energies
    Toru Akiyama, Harunobu Nakane, Motoshi Uchino, Kohji Nakamura, Tomonori Ito
    Physica Status Solidi B (2017)
    DOI: 10.1002/pssb.201700329

  45. High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
    Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Letters 111, 191103 (2017)
    DOI: 10.1063/1.5001979

  46. Femtosecond-laser irradiation onto sapphire substrates in N2 ambient atmosphere
    Reina Miyagawa, Kenzo Goto, Osamu Eryu
    Physica Status Solidi C 14, 1700224 (2017)
    DOI: 10.1002/pssc.201700224

  47. Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study
    Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Physica Status Solidi B, 1700446 (2017)
    DOI: 10.1002/pssb.201700446

  48. High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy
    Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Letters 111, 162102 (2017)
    DOI: 10.1063/1.5008258

  49. Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
    Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Journal of Crystal Growth 480, 90-95 (2017)
    DOI: 10.1016/j.jcrysgro.2017.10.018

  50. Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
    Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 7, 12820 (2017)
    DOI: 10.1038/s41598-017-12518-w

  51. DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy
    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
    Applied Physics Letters 111, 141602-1-5 (2017)
    DOI: DOI: 10.1063/1.4991608

  52. Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Journal of Crystal Growth 477, 12 (2017)
    DOI: 10.1016/j.jcrysgro.2017.03.010

  53. Systematic Theoretical Investigations of Polytypism in AlN
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Physica Status Solidi C, 1700212 (2017)
    DOI: 10.1002/pssc.201700212

  54. Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)
    Tomonori Ito, Toru Akiyama, Kohji Nakamura
    Physica Status Solidi B, 1700241 (2017)
    DOI: 10.1002/pssb.201700241

  55. Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
    Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Express 10, 101002 (2017)
    DOI: 10.7567/APEX.10.101002

  56. Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
    Atsushi Kobayashi, Masaaki Oseki, Jitsuo Ohta, Hiroshi Fujioka
    Physica Status Solidi B, 1700320 (2017)
    DOI: 10.1002/pssb.201700320

  57. Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure
    Le Duc Anh, Noboru Okamoto, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya
    Scientific Reports 7, 8715(1-7) (2017)
    DOI: 10.1038/s41598-017-09125-0

  58. Highly selective photocatalytic reduction of carbon dioxide with water over silver-loaded calcium titanate
    Akihiko Anzai, Naoto Fukuo, Akira Yamamoto, Hisao Yoshida
    Catalysis Communications 100, 134-138 (2017)
    DOI: 10.1016/j.catcom.2017.06.046

  59. Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth
    Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 078003-1-3 (2017)
    DOI: 10.7567/JJAP.56.078003

  60. Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions
    CH. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu
    Journal of Crystal Growth 468, 845-850 (2017)
    DOI: 10.1016/j.jcrysgro.2016.09.076

  61. Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
    S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    Journal of Crystal Growth 468, 851-855 (2017)
    DOI: 10.1016/j.jcrysgro.2016.12.011

  62. Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface
    Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 919 (2017)
    DOI: 10.1016/j.jcrysgro.2016.10.064

  63. Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study
    Harunobu Nakane, Toru Akiyama, Kohji Nakamura, Tomonori Ito
    Journal of Crystal Growth 468, 93 (2017)
    DOI: 10.1016/j.jcrysgro.2016.09.019

  64. Theoretical investigation of nitride nanowire-based quantum-shell lasers
    Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
    Physica Status Solidi A, 1600867 (2017)
    DOI: 10.1002/pssa.201600867

  65. Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy
    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 070304-1-4 (2017)
    DOI: 10.7567/JJAP.56.070304

  66. Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
    Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    Scientific Reports 7, 2944 (2017)
    DOI: 10.1038/s41598-017-03151-8

  67. Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
    Masaaki Oseki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
    Physica Status Solidi B, 1700211 (2017)
    DOI: 10.1002/pssb.201700211

  68. Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    Physica Status Solidi A, 1700244 (2017)
    DOI: 10.1002/pssa.201700244

  69. eduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer
    Matou Tatsuya, Takeshima Kento, Anh Le Duc, Seki Munetoshi, Tabata Hitoshi, Tanaka Masaaki, Ohya Shinobu
    Applied Physics Letters 110, 212406(1-4) (2017)
    DOI: 10.1063/1.4984297

  70. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
    Scientific Reports 7, 2112 (2017)
    DOI: 10.1038/s41598-017-02431-7

  71. High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
    CY. Huang, PY. Wu, KS. Chang, YH. Lin, WC. Peng, YY. Chang, JP. Li, HW. Yen, YS. Wu, H. Miyake, HC. Kuo
    AIP Advances 7, 55110 (2017)
    DOI: 10.1063/1.4983708

  72. Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers
    Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
    Journal of Vacuum Science and Technology B 35, 04F103-1-5 (2017)
    DOI: 10.1116/1.4980048

  73. First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions
    Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
    Physica Status Solidi B, 1600706 (2017)
    DOI: 10.1002/pssb.201600706

  74. Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer
    Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    Physica Status Solidi C, 1600243 (2017)
    DOI: 10.1002/pssc.201600243

  75. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
    Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, Hiroshi Fujioka
    Japanese Journal of Applied Physics 56, 031002 (2017)
    DOI: 10.7567/JJAP.56.031002

  76. Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy
    Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu
    Japanese Journal of Applied Physics 56, 038002 (2017)
    DOI: 10.7567/JJAP.56.038002

  77. Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth
    Tomonori Ito, Toru Akiyama
    Crystals 7, 46 (2017)
    DOI: 10.3390/cryst7020046

  78. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
    Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 5, 026102 (2017)
    DOI: 10.1063/1.4975617

  79. 窒化物半導体MOVPEの熱力学解析 ~面方位依存性~
    寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯
    日本結晶成長学会誌 Vol.43 No.4, 233 (2017)

  80. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
    Applied Physics Express 10, 025502 (2017)
    DOI: 10.7567/APEX.10.025502

  81. Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction
    DT. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai
    Japanese Journal of Applied Physics 56, 25502 (2017)
    DOI: 10.7567/JJAP.56.025502

  82. Electrical properties of Si-doped GaN prepared using pulsed sputtering
    Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 110, 042103 (2017)
    DOI: 10.1063/1.4975056

  83. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy
    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    Japanese Journal of Applied Physics 56, 015504 (2017)
    DOI: 10.7567/JJAP.56.015504

  84. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
    Hideto Miyake, Chia-Hung Lin, Kenta Tokoro, Kazumasa Hiramatsu
    Journal of Crystal Growth 456, 155-159 (2016)
    DOI: 10.1016/j.jcrysgro.2016.08.028

  85. Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates
    Shunsuke Okada, Hiroki Iwai, Hideto Miyake, Kazumasa Hiramatsu
    Journal of Crystal Growth (2016)
    DOI: 10.1016/j.jcrysgro.2016.12.011

  86. Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2
    Rie Togashi, Yumi Kisanuki, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202BE (2016)
    DOI: 10.7567/JJAP.55.1202BE

  87. High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy
    Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, Yoshinao Kumagai
    Japanese Journal of Applied Physics 55, 1202B3 (2016)
    DOI: 10.7567/JJAP.55.1202B3

  88. High-current-density indium nitride ultrathin-film transistors on glass substrates
    Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 142104 (2016)
    DOI: 10.1063/1.4964422

  89. Effective approach for accurately calculating individual energy of polar heterojunction interfaces
    Toru Akiyama, Harunobu Nakane, Kohji Nakamura, Tomonori Ito
    Physical Review B 94, 115302 (2016)
    DOI: 10.1103/PhysRevB.94.115302

  90. Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
    Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Applied Physics Express 9, 102101 (2016)
    DOI: 10.7567/APEX.9.102101

  91. High hole mobility p-type GaN with low residual hydrogen concentration
    Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    APL Materials 4, 086103 (2016)
    DOI: 10.1063/1.4960485

  92. GaInN-based tunnel junctions with graded layers
    Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    Applied Physics Express 9, 081005 (2016)
    DOI: 10.7567/APEX.9.081005

  93. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
    Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Applied Physics Letters 109, 032106 (2016)
    DOI: 10.1063/1.4959777

  94. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
    H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, H. Fujioka
    APL Materials 4, 076104 (2016)
    DOI: 10.1063/1.4959119

  95. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
    Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
    Scientific Reports 6, 29500 (2016)
    DOI: 10.1038/srep29500

  96. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu
    Applied Physics Express 9, 125601 (2016)
    DOI: 10.7567/APEX.9.125601

A02

  1. Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
    Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Taketomo Sato
    IEEE Transactions on Semiconductor Manufacturing 32, 489-495 (2019)
    DOI: 10.1109/TSM.2019.2944844

  2. Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
    Taketomo Sato, Masachika Toguchi, Yuto Komatsu, Keisuke Uemura
    IEEE Transactions on Semiconductor Manufacturing 32, 483-488 (2019)
    DOI: 10.1109/TSM.2019.2934727

  3. Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
    Masachika Toguchi, Kazuki Miwa, Taketomo Sato
    Journal of The Electrochemical Society 166, H510-H512 (2019)
    DOI: 10.1149/2.0551912jes

  4. Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor
    Z. Zhang, H. Wu, L. Sang, J. Huang, Y. Takahashi, L. Wang, M. Imura,, S. Koizumi, Y. Koide, M. Liao
    Carbon 152, 788-795 (2019)
    DOI: 10.1016/j.carbon.2019.06.072

  5. Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions
    Masachika Toguchi, Kazuki Miwa, Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Takehiro Yoshida, Taketomo Sato
    Applied Physics Express 12, 66504 (2019)
    DOI: 10.7567/1882-0786/ab21a1

  6. Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C
    J-W. Liu, H. Oosato, B. Da, T. Teraji, A. Kobayashi, H. Fujioka, Y. Koide
    Journal of Physics D: Applied Physics 52, 315104-1-7 (2019)
    DOI: 10.1088/1361-6463/ab1e31

  7. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
    Keisuke Uemura, Manato Deki, Yoshio Honda, Hiroshi Amano, Taketomo Sato
    Japanese Journal of Applied Physics 58, SCCD20 (2019)
    DOI: 10.7567/1347-4065/ab06b9

  8. High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
    J. Liu, H. Ohsato, B. Da, Y. Koide
    IEEE Journal of the Electron Devices Society 7, 561-565 (2019)
    DOI: 10.1109/jeds.2019.2915250

  9. Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases
    M. Liao, L. Sang, T. Shimaoka, M. Imura, S. Koizumi, Y. Koide
    Advanced Electronic Materials 5, 1800832-1-8 (2019)
    DOI: 10.1002/aelm.201800832

  10. Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source
    Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Taketomo Sato
    Applied Physics Express 12, 031003 (2019)
    DOI: 10.7567/1882-0786/ab043c

  11. Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
    Y. Ando, S. Kaneki, T. Hashizume
    Applied Physics Express 12, 024002 (2019)
    DOI: 10.7567/1882-0786/aafded

  12. Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
    M. Matys, K. Nishiguchi, B. Adamowicz, J. Kuzmik, T. Hashizume
    Journal of Applied Physics 124, 224502 (2018)
    DOI: 10.1063/1.5056194

  13. Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN
    Satoru Matsumoto, Masachika Toguchi, Kentaro Takeda, Tetsuo Narita, Tetsu Kachi, Taketomo Sato
    Japanese Journal of Applied Physics 57, 121001 (2018)
    DOI: 10.7567/JJAP.57.121001

  14. Effects of postmetallization annealing on interface properties of Al2O3/GaN structures
    T. Hashizume, S. Kaneki, T. Oyobiki, Y. Ando, S. Sasaki, K. Nishiguchi
    Applied Physics Express 11, 124102 (2018)
    DOI: 10.7567/APEX.11.124102

  15. Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation
    M. Liao, L. Sang, T. Teraji, S. Koizumi, Y. Koide
    Advanced Materials Technologies 4, 1800325-1-8 (2019)
    DOI: 10.1002/admt.201800325

  16. Reducing intrinsic energy dissipation in diamond-on-diamond mechanical resonators toward one million quality factor
    H. Wu, L. Sang, Y. Li, T. Teraji, T. Li, M. Imura, J. You, Y. Koide, M. Toda, M. Liao
    Physical Review Materials 2, 090601-1-6 (2018)
    DOI: 10.1103/PhysRevMaterials.2.090601

  17. Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy
    M. Imura, Y. Ota, R. G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, Y. Koide
    Physica Status Solidi (a) 215, 1800282-1-8 (2018)
    DOI: 10.1002/pssa.201800282

  18. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.
    Jiangwei Liu, Yasuo Koide
    SENSORS 18, 813-1-813-17. (2018)
    DOI: 10.3390/s18060813

  19. Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by damage-free neutral-beam etching using bio-nano-templates
    Yafeng Chen, Takayuki Kiba, Junichi Takayama, Akio Higo, Tomoyuki Tanikawa, Shula Chen, Seiji Samukawa, Akihiko Murayama
    Journal of Applied Physics 123, 204305 (2018)
    DOI: 10.1063/1.5027627

  20. 窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価
    井村 将隆, バナル ライアン, 廖 梅勇, 松元 隆夫, 熊本 明仁, 柴田 直哉, 幾原 雄一, 小出 康夫
    日本結晶成長学会誌 45, 1-11 (2018)
    DOI: 10.19009/jjacg.3-45-1-05

  21. Annealing effects on hydrogenated diamond NOR logic circuits
    J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide
    Applied Physics Letters 112, 153501 (2018)
    DOI: 10.1063/1.5022590

  22. Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
    Noritoshi Maeda, Joosun Yun, Masafumi Jo, Hideki Hirayama
    Japanese Journal of Applied Physics 57, 04H08-1-4 (2018)
    DOI: 10.7567/JJAP.57FH08

  23. State of the art on gate insulation and surface passivation for GaN-based power HEMTs
    T. Hashizume, K. Nisgiguchi, S. Kaneki, J. Kuzmik, Z. Yatabe
    Materials Science in Semiconductor Processing 78, 85-95 (2018)
    DOI: 10.1016/j.mssp.2017.09.028

  24. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy
    Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi
    Journal of Applied Physics 123, 095701-1-095701-8 (2018)
    DOI: 10.1063/1.5016574

  25. A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface
    Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
    Journal of Applied Physics 123, 161599-1-161599-7. (2018)
    DOI: 10.1063/1.5002176

  26. Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
    Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, Takashi Matsuoka
    Applied Physics Express 11, 031004 (2018)
    DOI: 10.7567/APEX.11.031004

  27. Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing
    Masamichi Akazawa, Naoshige Yokota, Kei Uetake
    AIP Advances 8, 25310 (2018)
    DOI: 10.1063/1.5017891

  28. High thermoelectric power factor of high-mobility two-dimensional electron gas
    H. Ohta, S. W. Kim, S. Kaneki, A. Yamamoto, T. Hashizume
    Advanced Science 5, 1700696 (2018)
    DOI: 10.1002/advs.201700696

  29. Effects of Ga supply on the growth of (11-22) AlN on m-plane (10-10) sapphire substrates
    Masafumi Jo, Hideki Hirayama
    Physica Status Solidi B, 1700418-1-4 (2018)
    DOI: 10.1002/pssb.201700418

  30. Improving the light-extraction efficiency of AlGaN DUV-LEDs by using a superlattice hole spreading layer and an Al reflector
    Noritoshi Maeda, Masafumi Jo, Hideki Hirayama
    Physica Status Solidi A, 1700436-1-5 (2018)
    DOI: 10.1002/pssa.201700436

  31. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
    Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka
    Applied Physics Express 11, 015503 (2018)
    DOI: 10.7567/APEX.11.015503

  32. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
    M. Matys, B. Adamowicz, S. Kaneki, K. Nishiguchi, T. Hashizume
    Journal of Applied Physics 122, 224504 (2017)
    DOI: 10.1063/1.5000497

  33. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
    Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Masafumi Jo, Takeshi Iwai, Toshiro Morita, Mitsunori Kokubo, Takaharu Tashiro, Ryuichiro Kamimura, Yamato Osada, Hideki Takagi, Hideki Hirayama
    Applied Physics Express 11, 012101-1-4 (2018)
    DOI: 10.7567/APEX.11.012101

  34. Effect of insertion of ultrathin Al2O3 interlayer at metal/GaN interfaces
    Masamichi Akazawa, Taito Hasezaki
    Physics Status Solidi B 255, 1700382 (2018)
    DOI: 10.1002/pssb.201700382

  35. Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen‐Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate
    Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide
    Physica Status Solidi A 214, 1700463-1-6 (2017)
    DOI: 10.1002/pssa.201700463

  36. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS-HEMTs
    K. Nishiguchi, S. Kaneki, S. Ozaki, T. Hashizume
    Japanese Journal of Applied Physics 56, 101001 (2017)
    DOI: 10.7567/JJAP.56.101001

  37. Design for stable lasing of an indirect injection THz quantum cascade laser operating at less than 2 THz
    Tsung-Tse Lin, Hideki Hirayama
    International Journal of Materials Science and Applications 11, 012101-1-4 (2017)
    DOI: 10.11648/j.ijmsa.20170605.11

  38. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations
    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
    Applied Physics Express 10, 082101 (2017)
    DOI: 10.7567/APEX.10.082101

  39. Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy
    Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka
    Physics Status Solidi B, 1600751 (2017)
    DOI: 10.1002/pssb.201600751

  40. Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
    J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide
    Journal of Applied Physics 121, 224502 (2017)
    DOI: 10.1063/1.4985066

  41. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
    J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide
    Applied Physics Letters 110, 203502 (2017)
    DOI: 10.1063/1.4983091

  42. Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking
    R. Negishi, K. Yamamoto, H. Kitakawa, M. Fukumori, H. Tanaka, T. Ogawa, Y. Kobayashi
    Applied Physics Letters 110, 201901 (2017)
    DOI: 10.1063/1.4983349

  43. Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
    Yusuke Kumazaki, Satoru Matsumoto, Taketomo Sato
    Journal of The Electrochemical Society 164, H477-H483 (2017)
    DOI: 10.1149/2.0771707jes

  44. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
    Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura,, Eiichiro Watanabe, Yasuo Koide
    IEEE Electron Device Letters 38, 922 (2017)
    DOI: 10.1109/led.2017.2702744

  45. Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
    Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato, Tamotsu Hashizume
    Journal of Applied Physics 121, 184501 (2017)
    DOI: 10.1063/1.4983013

  46. Improving sensor response using reduced graphene oxide film transistor biosensor by controlling the pyrene adsorption as an anchor molecules
    Ryota Negishi, Yuji Matsui, Yoshihiro Kobayashi
    Japanese Joournal of Applied Physics 56, 06GE04 (2017)
    DOI: 10.7567/JJAP.56.06GE04

  47. Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
    Jiangwei Liu, Yasuo Koide
    Biosensors and Biodetection 1572, pp217-232 (2017)
    DOI: 10.1007/978-1-4939-6911-1_15

  48. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy
    Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, AnLi Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Ke Wang, Tsutomu Araki, Yasushi Nanishi
    Journal of Applied Physics 121, 095703 (2017)
    DOI: 10.1063/1.4977201

  49. Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates
    Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata, Hideki Hirayama
    Physica Status Solidi C, 1600248 (2017)
    DOI: 10.1002/pssc.201600248

  50. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
    Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama
    Applied Physics Express 10, 031002 (2017)
    DOI: 10.7567/APEX.10.031002

  51. Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers
    Masamichi Akazawa, Atsushi Seino
    Physics Status Solidi B 254, 1600691 (2017)
    DOI: 10. 1002/pssb.201600691

  52. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
    M. Imura, R. G. Banal, M. Y. Liao, J. Liu, T. Arizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
    Journal of Applied Physics 121, 25702 (2017)
    DOI: 10.1063/1.4972979

  53. Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer
    Joosun Yun, Hideki Hirayama
    Journal of Applied Physics 121, 13105 (2017)
    DOI: 10.1063/1.4973493

  54. High-quality AlN template grown on a patterned Si (111) substrate
    Binh Tinh Tran, Hideki Hirayama, Masafumi Jo, Noritoshi Maeda, Daishi Inoue, Tomoka Kikitsu
    Journal of Crystal Growth 426, 225-229 (2017)
    DOI: 10.1016/j.jcrysgro.2016.12.100

  55. Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE
    Ryan G. Banal, Masataka Imura, Daiju Tsuya, Hideo Iwai, Yasuo Koide
    Physica Status Solidi A 217, 1600727 (2016)
    DOI: 10.1002/pssa.201600727

  56. Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications
    Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, Daishi Inoue, Tomoka Kikistu, Hideki Hirayama
    Scientific Reports 6, 35681 (2016)
    DOI: 10.1038/srep35681

  57. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
    Shota Kaneki, Joji Ohira, Shota Toiya, Zenji Yatabe, Joel T. Asubar, Tamotsu Hashizume
    Applied Physics Letters 109, 162104 (2016)
    DOI: 10.1063/1.4965296

  58. Design and fabrication of highperformance diamond triple-gate field-effect transistors
    Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide
    Scientific Reports 6, 34757 (2016)
    DOI: 10.1038/srep34757

  59. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
    J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
    Journal of Applied Physics 120, 124504-1 - 124504-4 (2016)
    DOI: 10.1063/1.4962851

  60. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors
    Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide
    Journal of Applied Physics 120, 115307-1 - 115307-7 (2016)
    DOI: 10.1063/1.4962854

B01

  1. Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination
    Hironori Okumura, Taketoshi Tanaka
    Japanese Journal of Applied Physics 58, 120902 (2019)
    DOI: 10.7567/1347-4065/ab4f90

  2. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys
    Shoji Ishibashi, Akira Uedono, Hiori Kino, Takashi Miyake, Kiyoyuki Terakura
    Journal of Physics: Condensed Matter 31, 475401 1-12 (2019)
    DOI: 10.1088/1361-648X/ab35a4

  3. Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
    Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Iurii Kim, Sami Suihkonen, Tomás Palacios
    IEEE Electron Device Letters 40, 1245 (2019)
    DOI: 10.1109/LED.2019.2923902

  4. Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dyanamics of excitons in GaN, AlN, and ZnO
    Kensuke Oki, Yoshihiro Ishitani
    Journal of Applied Physics 125, 205705 (2019)
    DOI: 10.1063/1.5092620

  5. Staticks of excitonic energy states based on phononic-excitonic-radiative model
    Yoshihiro Ishitani, Kensuke Oki, Hideto Miyake
    Japanese Journal of Applied Physics 58, SCCB34 (2019)
    DOI: 10.7567/1347-4065/ab09e2

  6. Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)
    Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomás Palacios
    Japanese Journal of Applied Physics 58, SBBD12 (2019)
    DOI: 10.7567/1347-4065/ab002b

  7. Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
    Hironori Okumura
    Japanese Journal of Applied Physics 58, 26502 (2019)
    DOI: 10.7567/1347-4065/aaf78b

  8. Electronic structure of (ZnO)1-x(InN)x alloys calculated by interacting quasi-band theory
    Ryota Furuki, Masato Oda, Yuzo Shinozuka
    Japanese Journal of Applied Physics 58, 21002 (2019)
    DOI: 10.7567/1347-4065/aaf56f

  9. Selective thermal radiation at longitudinal optical phonon energy under geometric condition of metal-semiconductor mesa stripe structures
    Yoshihiro Ishitani, Tomoyuki Aoki, Hidenori Funabashi, Ken Morita
    Applied Physics Letters 113, 192105 (2018)
    DOI: 10.1063/1.5047458

  10. Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films
    Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno
    Japanese Journal of Applied Physics 57, 11UF16 (2018)
    DOI: 10.7567/JJAP.57.11UF16

  11. N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications
    Jori Lemettinen, Hironori Okumura, Tomás Palacios, Sami Suihkonen
    Applied Physics Express 11, 101002 (2018)
    DOI: 10.7567/APEX.11.101002

  12. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
    A Uedono, T. Nabatame, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, S. Ishibashi
    Journal of Applied Physics 123, 155302(1-8) (2018)
    DOI: 10.1063/1.5026831

  13. Terahertz pulse generation by the tilted pulse front technique using an M-shaped optical system
    Ken Morita, Kento Shiozawa, Koji Suizu, Yoshihiro Ishitani
    Japanese Journal of Applied Physics 57, 50304 (2018)
    DOI: 10.7567/JJAP.57.050304

  14. Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy
    Takeaki Hamachi, Shotaro Takeuchi, Tetsuya Tohei, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Akira Sakai
    Journal of Applied Physics 123, 161417 (2018)
    DOI: 10.1063/1.5011345

  15. AlN metal-semiconductor field-effect transistors using Si-ion implantation
    Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomás Palacios
    Japanese Journal of Applied Physics 57, 04FR11 (2018)
    DOI: 10.7567/JJAP.57.04FR11

  16. Subnanopore filling during water vapor adsorption on microporous silica thin films as seen by low-energy positron annihilation
    Kenji Ito, Shigeru Yoshimoto, Brian E. O'Rourke, Nagayasu Oshima, Kazuhiro Kumaga
    Applied Physics Letters 112, 083701 (2018)
    DOI: 10.1063/1.5021105

  17. MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
    J. Lemettinen, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen
    Journal of Crystal Growth 487, 50 (2018)
    DOI: 10.1016/j.jcrysgro.2018.02.020

  18. X-ray electron density investigation of chemical bonding in van der Waals materials
    Hidetaka Kasai, Kasper Tolborg, Mattia Sist, Jiawei Zhang, Venkatesha R. Hathwar, Mette Ø. Filsø, Simone Cenedese, Kunihisa Sugimoto, Jacob Overgaard, Eiji Nishibori, Bo B. Iversen
    Nature Materials 17, 249 (2018)
    DOI: 10.1038/s41563-017-0012-2

  19. MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
    J. Lemettinen, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen
    Journal of Crystal Growth 487, 12 (2018)
    DOI: 10.1016/j.jcrysgro.2018.02.013

  20. Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
    S. Iwashita, T. Moriya, T. Kikuchi, M. Kagaya, N. Noro, T. Hasegawa, A. Uedono
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 021515(1-8) (2018)
    DOI: 10.1116/1.5001552

  21. Retreat from Stress: Rattling in a Planar Coordination
    Koichiro Suekuni, Chul Ho Lee, Hiromi I. Tanaka, Eiji Nishibori, Atsushi Nakamura, Hidetaka Kasai, Hitoshi Mori, Hidetomo Usui, Masayuki Ochi, Takumi Hasegawa, Mitsutaka Nakamura, Seiko Ohira-Kawamura, Tatsuya Kikuchi, Koji Kaneko, Hirotaka Nishiate, Katsuaki Hashikuni, Yasufumi Kosaka, Kazuhiko Kuroki, Toshiro Takabatake
    Advanced Materials 30, 1706230 (2018)
    DOI: 10.1002/adma.201706230

  22. Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1- x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy
    M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, T. Honda
    Applied Physics Express 11, 021002(1-4) (2018)
    DOI: 10.7567/APEX.11.021002

  23. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
    Kazuki Shida, Shotaro Takeuchi, Tetsuya Tohei, Hideto Miyake, Kazumasa Hiramatsu, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
    Journal of Applied Physics 123, 161563 (2018)
    DOI: 10.1063/1.5011291

  24. Carrier trapping by vacancy-type defects in Mg-implanted GaN studied using monoenergetic positron beams
    A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, S. Ishibashi
    Phys. Stat. Sol. B 2017, 1700521(1-9) (2017)
    DOI: 10.1002/pssb.201700521

  25. Two-Component Density Functional Study of Positron-Vacancy Interaction in Metals and Semiconductors
    Shoji Ishibashi
    Acta Physica Polonica A 132, 1602-1605 (2017)
    DOI: 10.12693/APhysPolA.132.1602

  26. Study of Li atom diffusion in amorphous Li3PO4 with neural network potential
    Wenwen Li, Yasunobu Ando, Emi Minamitani, Satoshi Watanabe
    The Journal of Chemical Physics 147, 214106 (2017)
    DOI: 10.1063/1.4997242

  27. Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures
    Hironiri Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, Yoshihiro Ishitani
    Journal of Physics D: Applied Physics 51, 15105 (2017)
    DOI: /10.1088/1361-6463/aa9918

  28. Ferroelectric and Magnetic Properties in Room-Temperature Multiferroic GaxFe2−xO3 Epitaxial Thin Films
    Tsukasa Katayama, Shintaro Yasui, Yosuke Hamasaki, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Mitsuru Itoh
    Advanced Functional Materials 28, 1704789 (2018)
    DOI: 10.1002/adfm.201704789

  29. Population decay time and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients
    Kensuke Oki, Bei Ma, Yoshihiro Ishitani
    Physical Review B 96, 205204 (2017)
    DOI: 10.1103/PhysRevB.96.205204

  30. Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles
    L. V. Devi, S. Sellaiyan, T. Selvalakshmi, H.J. Zhang, A. Uedono, K. Sivaji, S. Sankar
    Advanced Powder Technology 28, 3026-3038 (2017)
    DOI: 10.1016/j.apt.2017.09.013

  31. Strain-induced nanostructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 on SrTiO3 epitaxial thin films with low PbTiO3 concentration
    Takanori Kiguchi, Cangyu Fan, Takahisa Shiraishi, Toyohiko J. Konno
    Japanese Journal of Applied Physics 56, 10PB12 (2017)
    DOI: 10.7567/JJAP.56.10PB12

  32. Control of dislocation morphology and lattice distortion in Na-flux GaN crystals
    Shotaro Takeuchi, Yuki Mizuta, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai
    Journal of Applied Physics 122, 105303 (2017)
    DOI: 10.1063/1.4989647

  33. Cu diffusion in amorphous Ta2O5 studied with a simplified neural network potential
    Wenwen Li, Yasunobu Ando, Satoshi Watanabe
    Journal of the Physical Society of Japan 86, 104004 (2017)
    DOI: 10.7566/JPSJ.86.104004

  34. First-principles calculation of electron-phonon coupling at a Ga vacancy in GaN
    T. Tsujio, M. Oda, Y. Shinozuka
    Japanese Journal of Applied Physics 56, 091001 (2017)
    DOI: 10.7567/JJAP.56.091001

  35. Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
    A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, M. Sumiya
    Thin Solid Films 639, 78-83 (2017)
    DOI: 10.1016/j.tsf.2017.08.021

  36. Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing
    S. R. Aid, T. Uneme, N. Wakabayashi, K. Yamazaki, A Uedono, S. Matsumoto
    Physica Status Solidi A 214, 1700225(1-5) (2017)
    DOI: 10.1002/pssa.201700225

  37. Crystal structure and magnetism in κ-Al2O3-type AlxFe2-xO3 films on SrTiO3(111)
    Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Tomoyasu Taniyama, Mitsuru Itoh
    Journal of Applied Physics 122, 15301 (2017)
    DOI: 10.1063/1.4990947

  38. Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation
    A. Uedono, M. Imanishi, M. Imade, M. Yoshimura, S. Ishibashi, M. Sumiya, Y. Mori
    Journal of Crystal Growth 475, 261-265 (2017)
    DOI: 10.1016/j.jcrysgro.2017.06.027

  39. Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction
    Kazuki Shida, Shotaro Takeuchi, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai
    ACS Applied Materials & Interfaces (2017)
    DOI: 10.1021/acsami.7b01309

  40. Effect of La doping on the lattice defects and photoluminescence properties of CuO
    L. V. Devi, T. Selvalakshmi, S. Sellaiyan, A. Uedono, K. Sivaji, S. Sankar
    Journal of Alloys and Compounds 709, 496-504 (2017)
    DOI: 10.1016/j.jallcom.2017.03.148

  41. Influence of Si wafer thinning processes on (sub)surface defects
    F. Inoue, A. Jourdain, L. Peng, A. Phommahaxay, J. De Vos, K. J. Rebibis, A. Miller, E. Sleeckx, E. Beyne, A. Uedono
    Applied Surface Science 404, 82-87 (2017)
    DOI: 10.1016/j.apsusc.2017.01.259

  42. Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9/Si structures using a monoenergetic positron beam
    A. Uedono, M. Zhao, E. Simoen
    J. Appl. Phys. 120, 215702(1-7) (2016)
    DOI: 10.1063/1.4970984

  43. Electronic structure calculation of Si1-xSnx compound alloy using interacting quasi‐band theory
    Masato Oda, Yukina Kuroda, Ayaka Kishi, Yuzo Shinozuka
    Physica Status Solidi B 254, 1600519 (2017)
    DOI: 10.1002/pssb.201600519

  44. Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure
    Y. Mizushima, Y. Kim, T. Nakamura, A. Uedono, T. Ohba
    Microelectronic Engineering 167, 23-31 (2017)
    DOI: 10.1016/j.mee.2016.10.010

  45. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique
    Shohei Kamada, Shotaro Takeuchi, Dinh Thanh Khan, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, and Akira Sakai
    Applied Physics Express 9, 111001 (2016)
    DOI: 10.7567/APEX.9.111001

  46. Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films
    Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
    Journal of Physics D: Applied Physics 49, 351107 (2016)
    DOI: 10.1088/0022-3727/49/37/375107

  47. Investigation on photoluminescence properties and defect chemistry of GdAlO3:Dy3+ Ba2+ phosphors
    T. Selvalakshmi, S. Sellaiyan, A. Uedono, T. Semba, A. C. Bose
    Optical Materials 58, 524-530 (2016)
    DOI: 10.1016/j.optmat.2016.06.044

B02

  1. Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy
    K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, S. F. Chichibu
    APL Materials 7, 071116 (2019)
    DOI: 10.1063/1.5110652

  2. Electronic structures of a cerasome surface model
    Masato Oda
    Japanese Journal of Applied Physics 58, SIID04 (2019)
    DOI: 10.7567/1347-4065/ab1b61

  3. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
    Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi, Akira Uedono
    Japanese Journal of Applied Physics 58, SC0802 (2019)
    DOI: 10.7567/1347-4065/ab0d06

  4. Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions
    Masato Oda
    Japanese Journal of Applied Physics 58, SCCC16 (2019)
    DOI: 10.7567/1347-4065/ab07a7

  5. Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
    Kazunobu Kojima, Kenichiro Ikemura, Shigefusa F. Chichibu
    Applied Physics Express 12, 062010 (2019)
    DOI: 10.7567/1882-0786/ab2165

  6. Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions
    Satoshi Kurai, Ayumu Wakamatsu, Yoichi Yamada
    Japanese Journal of Applied Physics 58, SCCB13/1-6 (2019)
    DOI: 10.7567/1347-4065/ab0cfb

  7. Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination
    Hideaki Murotani, Kazunori Shibuya, Ayumu Yoneda, Yuki Hashiguchi, Hiroyuki Miyoshi, Satoshi Kurai, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
    Japanese Jpurnal of Applied Physics 58, SCCB02/1-5 (2019)
    DOI: 10.7567/1347-4065/ab040b

  8. Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation
    Atsushi Sakaki, Mitsuru Funato, Munehiko Miyano, Toshiyuki Okazaki, Yoichi Kawakami
    Scientific Reports 9, 3733 (2019)
    DOI: 10.1038/s41598-019-39086-5

  9. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
    K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, S. F. Chichibu
    Applied Physics Letters 114, 011102 (2019)
    DOI: 10.1063/1.5063735

  10. Red-emitting InxGa1-xN/InyGa1-y N quantum wells grown on lattice-matched InyGa1-y N/ScAlMgO4(0001) templates
    Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 12, 011007 (2019)
    DOI: 10.7567/1882-0786/aaf4b1

  11. Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy
    Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami
    Japanese Journal of Appllied Physics 58, 010904 (2019)
    DOI: 10.7567/1347-4065/aaef3e

  12. Dominant nonradiative recombination paths and their activation processes in AlxGa1-xN-related materials
    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
    Physical Review Applied 10, 064027 (2018)
    DOI: 10.1103/PhysRevApplied.10.064027

  13. AlxGa1-xN‐Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination
    Minehiro Hayakawa, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
    Advanced Optical Materials 7, 1801106 (2019)
    DOI: 10.1002/adom.201801106

  14. Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes
    Hideaki Murotani, Yoichi Yamada
    Japanese Journal of Applied Physics 58, 011003/1-6 (2019)
    DOI: 10.7567/1347-4065/aaec8e

  15. Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H
    K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, S. F. Chichibu
    Applied Physics Letters 113, 191901 (2018)
    DOI: 10.1063/1.5050967

  16. Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells om moderate temperature GaN pit expansion layers
    Satoshi Kurai, Kohei Okawa, Ryoga Makio, Genki Nobata, Junji Gao, Kohei Sugimoto, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
    Journal of Applied Physics 124, 083107/1-7 (2018)
    DOI: 10.1063/1.5043578

  17. Growth mechanism of polar-plane-free faceted InGaN quantum wells
    Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakam
    IEICE Transactions on Electronics E101-C, 532 (2018)
    DOI: 10.1587/transele.E101.C.532

  18. Femtosecond laser-assisted thermal annealing of Ni electrode on SiC substrate
    Hiroki Kawakami, Yoshiki Naoi, Takuro Tomita
    AIP Advances 8, 065204 (2018)
    DOI: 10.1063/1.5036804

  19. Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
    Hideaki Murotani, Yuya Hayakawa, Kazuki Ikeda, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Journal of Applied Physics 123, 205705/1-7 (2018)
    DOI: 10.1063/1.5023996

  20. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
    S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, A. Uedono
    Applied Physics Letters 112, 211901 (2018)
    DOI: 10.1063/1.5030645

  21. >AlxGa1-xNN-based semipolar deep ultraviolet light-emitting diodes
    Ryota Akaike, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 11, 061001 (2018)
    DOI: 10.7567/APEX.11.061001

  22. Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells
    Satoshi Kurai, Nobuto Imura, Li Jin, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Japanese Journal of Applied Physics 57, 060311 (2018)
    DOI: 10.7567/JJAP.57.060311

  23. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
    Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Shoji Ishibashi
    Journal of Applied Physics 123, 161413 1-13 (2018)
    DOI: 10.1063/1.5012994

  24. Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals
    Shigefusa F. Chichibu, Youichi Ishikawa, Hiroko Kominami, Kazuhiko Hara
    Journal of Applied Physics 123, 065104 1-8 (2018)
    DOI: 10.1063/1.5021788

  25. Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells
    Atsushi Sakaki, Mitsuru Funato, Tomoaki Kawamura, Jun Araki, Yoichi Kawakami
    Applied Physics Express 11, 031001 (2018)
    DOI: 10.7567/APEX.11.031001

  26. Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer
    Hideaki Murotani, Kazuki Ikeda, Takuto Tsurumaru, Ryota Fujiwara, Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Physica Status Solidi B, 1700374 (2018)
    DOI: 10.1002/pssb.201700374

  27. Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface
    Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Takuya Hashimoto, Hiroki Kawakami, Yuki Fuchikami, Hiromu Hisazawa, Yasuhiro Tanaka
    Applied Physics Express 11, 016502 (2018)
    DOI: 10.7567/APEX.11.016502

  28. Potential barrier formed around dislocations in InGaN quantum well structures by spot cathodoluminescence measurements
    Satoshi Kurai, Shota Higaki, Nobuto Imura, Kohei Okawa, Ryoga Makio, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
    Physica Status Solidi B, 1700358 (2017)
    DOI: 10.1002/pssb.201700358

  29. Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells
    Ken Kataoka, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 10, 121001 (2017)
    DOI: 10.7567/APEX.10.121001

  30. Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells
    Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada
    Applied Physics Letters 111, 172105 (2017)
    DOI: 10.1063/1.4998798

  31. Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond
    Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, Yasuhiro Tanaka
    Japanese Journal of Applied Physics 56, 112701 (2017)
    DOI: 10.7567/JJAP.56.112701

  32. Spatially resolved spectroscopy of blue and green InGaN quantum wells by scanning near-field optical microscopy
    Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
    Physica Status Solidi B, 1700322 (2017)
    DOI: 10.1002/pssb.201700322

  33. Origin of temperature-induced luminescence peak shifts from semipolar (11-22) InGaN quantum wells
    Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami
    Physical Review B 96, 125305 (2017)
    DOI: 10.1103/PhysRevB.96.125305

  34. First-principles calculation of electron?phonon coupling at a Ga vacancy in GaN
    Takeshi Tsujio, Masato Oda, Yuzo Shinozuka
    Japanese Journal of Applied Physics 56, 91001 (2017)
    DOI: 10.7567

  35. Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals
    Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shigefusa F. Chichibu
    Applied Physics Letters 111, 032111 (2017)
    DOI: 10.1063/1.4995398

  36. Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities
    Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami
    Applied Physics Express 10, 071003 (2017)
    DOI: 10.7567/APEX.10.071003

  37. High-efficiency light emission by means of exciton-surface-plasmon coupling
    Koichi Okamoto, Mitsuru Funato, Yoichi Kawakami, Kaoru Tamada
    Journal of Photochemistry and Photobiology C: Photochemistry Reviews 32, 58 (2017)
    DOI: 10.1016/j.jphotochemrev.2017.05.005

  38. Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
    Kazunobu Kojima, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Mitsuaki Shimizu, Tokio Takahashi, Shoji Ishibashi, Akira Uedono, Shigefusa F. Chichibu
    Applied Physics Express 10, 061002 (2017)
    DOI: 10.7567/APEX.10.061002

  39. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer
    Hiroshi Nakai, Mutsumi Sugiyama, Shigefusa F. Chichibu
    Applied Physics Letters 110, 181102 (2017)
    DOI: 10.1063/1.4982653

  40. Effects of Al and N2 flow sequences on the interface formation of AlN on sapphire by EVPE
    Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
    Crystals 7, 123 (2017)
    DOI: 10.3390/cryst7050123

  41. Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells
    Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 051003 (2017)
    DOI: 10.7567/APEX.10.051003

  42. Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates
    Mitsuru Funato, Mami Shibaoka, Yoichi Kawakami
    Journal of Applied Physics 121, 85304 (2017)
    DOI: 10.1063/1.4977108

  43. Deep ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells
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    Applied Physics Express 10, 031001 (2017)
    DOI: 10.7567/APEX.10.031001

  44. High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells
    Hideaki Murotani, Katsuto Nakamura, Tomonori Fukuno, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
    Applied Physics Express 10, 021002 (2017)
    DOI: 10.7567/APEX.10.021002

  45. A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1-xN multiple quantum wells
    Kazunobu Kojima, Kentaro Furusawa, Yoshiki Yamazaki, Hideto Miyake, Kazumasa Hiramatsu, Shigefusa F. Chichibu
    Applied Physics Express 10, 015802 (2017)
    DOI: 10.7567/APEX.10.015802

  46. Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters
    Shigefusa F. Chichibu, Kazunobu Kojima, Akira Uedono, Yoshitaka Sato
    Advanced Materials 29, 1603644 (2017)
    DOI: 10.1002/adma.201603644

  47. Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells
    Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara
    Applied Physics Letters 109, 182101 (2016)
    DOI: 10.1063/1.4965844

  48. Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy
    Yoichi Kawakami, Akio Kaneta, Akira Hashiya, Mitsuru Funato
    Physical Review Applied 6, 44018 (2016)
    DOI: 10.1103/PhysRevApplied.6.044018

  49. Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy
    PeiTsen Wu, Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
    Crystal Growth & Design 16, 6337 (2016)
    DOI: 10.1021/acs.cgd.6b00979